Q62702-C2537

BC 846PN NPN/PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package 4 5 6 2 Tape loading orientation 3 VPS05604 1 PIN Configuration Type BC 846PN Marking Ordering Code 1Os Q62702-C2537 Package NPN-Transistor 1 = E 2 = B 6 = C SOT-363 PNP-Transistor 4 = E 5 = B 3 = C Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 65 80 80 5 100 200 250 150 -65...+150 ≤275 ≤140 K/W mW °C V V mA Unit V VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg RthJA RthJS 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BC 846PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage typ. max. 15 5 Unit V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO ICBO hFE 65 80 80 5 - V I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 Collector-emitter breakdown voltage V I C = 10 µA, VBE = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E =...