Q62702-C623

NPN Silicon AF Transistors BCX 58 BCX 59 High current gain q Low collector-emitter saturation voltage q Complementary types: BCX 78, BCX 79 (PNP) q 2 3 1 Type BCX 58 VIII BCX 58 IX BCX 58 X BCX 59 VIII BCX 59 IX BCX 59 X Marking – Ordering Code Q62702-C619 Q62702-C620 Q62702-C621 Q62702-C623 Q62702-C624 Q62702-C625 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) 1) 2) Symbol BCX 58 VCE0 VCB0 VEB0 IC ICM IBM Tj Tstg 32 32 Values BCX 59 45 45 7 100 200 200 500 150 – 65 … + 150 Unit V mA Total power dissipation, TC = 70 ˚C Ptot mW ˚C Rth JA Rth JC ≤ ≤ 250 160 K/W For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BCX 58 BCX 59 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 2 mA BCX 58 BCX 59 Collector-base breakdown voltage IC = 10 µA BCX 58 BCX 59 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C BCX 58 BCX 59 BCX 58 BCX 59 ICEX – – IEB0 hFE BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X BCX 59 VII BCX...