BC 517
NPN Silicon Darlington Transistor
High current gain q High collector current q Complementary type: BC 516 (PNP)
...
BC 517
NPN Silicon Darlington
Transistor
High current gain q High collector current q Complementary type: BC 516 (
PNP)
q 2 1 1 3
BC 517
Type BC 517
Marking –
Ordering Code Q62702-C825
Pin Configuration 1 2 3 C B E
Package1) TO-92
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC
≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values 30 40 10 500 800 100 200 625 150 – 65 … + 150
Unit V
mA
mW ˚C
200 135
K/W
1) 2)
For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91
BC 517
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 100 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 20 mA; VCE = 2 V1) Collector-emitter saturation voltage1) IC = 100 mA; IB = 0.1 mA Base-emitter voltage1) IC = 10 mA; VCE = 5 V AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz fT Cobo – – 150 3.5 – – MHz pF V(BR)CE0 V(BR)CB0...
