Document
NPN Silicon AF Transistors
BCX 54 … BCX 56
Features For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 … BCX 53 (PNP)
q
Type BCX 54 BCX 54-10 BCX 54-16 BCX 55 BCX 55-10 BCX 55-16 BCX 56 BCX 56-10 BCX 56-16
Marking BA BC BD BE BG BM BH BK BL
Ordering Code (tape and reel) Q62702-C954 Q62702-C1861 Q62702-C1731 Q62702-C1729 Q62702-C1730 Q62702-C1903 Q62702-C1614 Q62702-C1635 Q62702-C1613
Pin Configuration 1 2 3 B C E
Package1) SOT-89
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BCX 54 … BCX 56
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol BCX 54 VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg 45 45 5
Values BCX 55 60 60 5 1 1.5 100 200 1 150
Unit BCX 56 80 100 5 A mA W ˚C V
Total power dissipation, TS = 130 ˚C Ptot
– 65 … + 150
75 20
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BCX 54 … BCX 56
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCX 54 BCX 55 BCX 56 Collector-base breakdown voltage IC = 100 µA BCX 54 BCX 55 BCX 56 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain1) IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V BCX 54, BCX 55, BCX 56 BCX 54-10, BCX 55-10, BCX 56-10 BCX 54-16, BCX 55-16, BCX 56-16 IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz fT – 100 – MHz V(BR)CE0 45 60 80 V(BR)CB0 45 60 100 V(BR)EB0 ICB0 – – IEB0 hFE 25 40 63 100 25 VCEsat VBE – – – – 100 160 – – – – 250 160 250 – 0.5 1 V – – – – 100 20 20 nA
µA
Values typ. max.
Unit
V – – – – – –
– – – –
– – – –
5
nA –
1)
Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
BCX 54 … BCX 56
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Transition frequency fT = f (IC) VCE = 10 V
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector cutoff current ICB0 = f (TA) VCB = 30 V
Semiconductor Group
4
BCX 54 … BCX 56
Collector current IC = f (VBE) VCE = 2 V
Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10
Base-emitter saturation voltage IC = f (VBEsat) hFE = 10
DC current gain hFE = f (IC) VCE = 2 V
Semiconductor Group
5
.