IS42S16100

IS42S16100 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEBRUARY 2008 FEATURES Clock frequency: 200, 166, 143 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated simultaneously and independently Dual internal bank controlled by A11 (bank select) Single 3.3V power supply LVTTL interface Programmable burst length – (1, 2, 4, 8, full page) Programmable burst sequence: Sequential/Interleave 2048 refresh cycles every 32 ms Random column address every clock cycle Programmable CAS latency (2, 3 clocks) Burst read/write and burst read/single write operations capability Burst termination by burst stop and precharge command Byte controlled by LDQM and UDQM Packages 400-mil 50-pin TSOP-II and 60-ball BGA Lead-free package option Available in Industrial Temperature DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288...