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IDT7M1003 Dataheets PDF



Part Number IDT7M1003
Manufacturers Integrated Device
Logo Integrated Device
Description 128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE
Datasheet IDT7M1003 DatasheetIDT7M1003 Datasheet (PDF)

® Integrated Device Technology, Inc. 128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE DESCRIPTION: IDT7M1001 IDT7M1003 FEATURES • High-density 1M/512K CMOS Dual-Port Static RAM module • Fast access times: —Commercial 35, 40ns —Military 40, 50ns • Fully asynchronous read/write operation from either port • Full on-chip hardware support of semaphore signaling between ports • Surface mounted LCC (leadless chip carriers) components on a 64-pin sidebraze DIP (Dual In-line Package) • Multiple Vcc .

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® Integrated Device Technology, Inc. 128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE DESCRIPTION: IDT7M1001 IDT7M1003 FEATURES • High-density 1M/512K CMOS Dual-Port Static RAM module • Fast access times: —Commercial 35, 40ns —Military 40, 50ns • Fully asynchronous read/write operation from either port • Full on-chip hardware support of semaphore signaling between ports • Surface mounted LCC (leadless chip carriers) components on a 64-pin sidebraze DIP (Dual In-line Package) • Multiple Vcc and GND pins for maximum noise immunity • Single 5V (± 10%) power supply • Input/outputs directly TTL-compatible PIN CONFIGURATION(1) VCC R/WL OEL CSL SEML A0L A1L GND A2L A3L A4L A5L A6L A7L A8L A9L A10L A11L A12L A13L A14L A15L A16L I/O 0L I/O 1L I/O 2L I/O 3L I/O 4L I/O 5L I/O 6L I/O 7L GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 GND R/WR OER CSR SEMR A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R A10R A11R A12R A13R A14R A15R A16R GND I/O 0R I/O 1R I/O 2R I/O 3R I/O 4R I/O 5R I/O 6R I/O 7R VCC The IDT7M1001/IDT7M1003 is a 128K x 8/64K x 8 highspeed CMOS Dual-Port Static RAM module constructed on a multilayer ceramic substrate using eight IDT7006 (16K x 8) Dual-Port RAMs and two IDT FCT138 decoders or depopulated using only four IDT7006s and two decoders. This module provides two independent ports with separate control, address, and I/O pins that permit independent and asynchronous access for reads or writes to any location in memory. System performance is enhanced by facilitating port-to-port communication via semaphore (SEM) “handshake” signaling. The IDT7M1001/1003 module is designed to be used as stand-alone Dual-Port RAM where on-chip hardware port arbitration is not needed. It is the users responsibility to ensure data integrity when simultaneously accessing the same memory location from both ports. The IDT7M1001/1003 module is packaged on a multilayer co-fired ceramic 64-pin DIP (Dual In-line Package) with dimensions of only 3.2" x 0.62" x 0.38". Maximum access times as fast as 35ns over the commercial temperature range are available. All inputs and outputs of the IDT7M1001/1003 are TTLcompatible and operate from a single 5V supply. Fully asynchronous circuitry is used, requiring no clocks or refreshing for operation of the module. All IDT military module semiconductor components are manufacured in compliance with the latest revision of MILSTD-883, Class B, making them ideally suited to applications demanding the highest level of performance and reliability. PIN NAMES Left Port A (0–16)L I/O (0–7)L R/WL CSL OEL SEML Right Port A (0–16)R I/O (0–7)R R/WR CSR OER SEMR Description Address Inputs Data Inputs/Outputs Read/Write Enables Chip Select Output Enable Semaphore Control Power Ground 2804 tbl 01 VCC GND 2804 drw 01 DIP TOP VIEW NOTE: 1. For the IDT7M1003 (64K x 8) version, Pins 23 and 43 must be connected to GND for proper operation of the module. The IDT logo is a registered trademark of Integrated Device Technology, Inc. MILITARY AND COMMERCIAL TEMPERATURE RANGES ©1995 Integrated Device Technology, Inc. MARCH 1995 DSC-7066/5 7.5 1 IDT7M1001/1003 128K/64K x 8 CMOS DUAL-PORT STATIC RAM MODULE MILITARY AND COMMERCIAL TEMPERATURE RANGES FUNCTIONAL BLOCK DIAGRAM 7M1001 CS L L_A16 L_A15 L_A14 CS R CS L CS R CS L L_CS 74FCT138 74FCT138 R_CS L_A0-13 L_OE L_R/W L_I/O0-7 CS L CS R CS L CS R CS L 7006 7006 7006 L_SEM 7M1003 L_A15 L_A14 L_CS 74FCT138 74FCT138 R_CS L_A0-13 L_OE L_R/W L_I/O0-7 CS L CS R CS L R CS CS L 7006 7006 7006 L_SEM 7.5 7025 CS R CS R CS R 7006 7006 7006 7006 R_I/O0-7 CS L CS R R_R/W R_OE R_A0-13 R_A14 R_A15 R_A16 CS L 7006 CS R R_SEM 2804 drw 02 R_I/O0-7 R_R/W R_OE R_A0-13 R_A14 R_A15 CS L 7006 CS R R_SEM 2804 drw 03 2 IDT7M1001/1003 128K/64K x 8 CMOS DUAL-PORT STATIC RAM MODULE MILITARY AND COMMERCIAL TEMPERATURE RANGES ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM Rating Terminal Voltage with Respect to GND Operating Temperature Temperature Under Bias Storage Temperature DC Output Current Commercial –0.5 to +7.0 Military –0.5 to +7.0 Unit V RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade Military Ambient Temperature –55°C to +125°C 0°C to +70°C GND 0V 0V VCC 5.0V ± 10% 5.0V ± 10% 2804 tbl 04 TA TBIAS TSTG IOUT 0 to +70 –55 to +125 –55 to +125 50 –55 to +125 –65 to +135 –65 to +150 50 °C °C °C mA Commercial NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2804 tbl 02 RECOMMENDED DC OPERATING CONDITIONS Symbol VCC GND VIH VIL Parameter.


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