Document
256KB AND 512KB SECONDARY CACHE MODULES FOR THE PowerPC™
Integrated Device Technology, Inc.
IDT7MPV6253 IDT7MPV6255/56
FEATURES
• For CHRP based PowerPC™ systems. • Asynchronous and pipelined burst SRAM options in the same module pinout • Low-cost, low-profile card edge module with 178 leads • Uses Burndy Computerbus™ connector, part number ELF182KSC-3Z50 • Operates with external PowerPC CPU speeds up to 66MHz • Separate 5V (±5%) and 3.3V (+10/-5%) power supplies • Multiple GND pins and decoupling capacitors for maximum noise immunity • Presence Detect output pins allow the system to determine the particular cache configuration.
x 8 asynchronous static RAMs and the IDT7MPV6255/56 use IDT’s 71V432 32K x 32 pipelined synchronous burst static RAMs in plastic surface mount packages mounted on a multilayer epoxy laminate (FR-4) board. In addition, each of the modules uses the IDT 71216 16K x 15 Cache-Tag static RAM and IDT FCT logic. Extremely high speeds are achieved using IDT’s high-reliability, low cost CMOS technology. The low profile card edge package allows 178 signal leads to be placed on a package 5.06" long, a maximum of 0.250" thick and a maximum of 1.08" tall. The module space savings versus discrete components allows the OEM to design additional functions onto the system or to shrink the size of the motherboard for reduced cost. All inputs and outputs are LVTTL-compatible, and operate from separate 5V (±5%) and 3.3V (+10/-5%) power supplies. Multiple GND pins and on-board decoupling capacitors ensure maximum protection from noise.
DESCRIPTION
The IDT7MPV6253/55/56 modules belong to a family of secondary caches intended for use with PowerPC CPUbased systems. The IDT7MPV6253 uses IDT’s 71V256 32K
FUNCTIONAL BLOCK DIAGRAM IDT7MPV6253 – 256KB ASYNCHRONOUS VERSION
A14 - A26 ALE ADDRA0 ADDRA1 SRAM OE1 WE#0 32K x 8 Asynchronous SRAM 32K x 8 Asynchronous SRAM 32K x 8 Asynchronous SRAM 32K x 8 Asynchronous SRAM
8 13
Latch
13
PD0 PD1 PD2 ADDRA0 ADDRA1 SRAM OE0 DH0 - DH7 WE#4 32K x 8 Asynchronous SRAM 32K x 8 Asynchronous SRAM 32K x 8 Asynchronous SRAM 32K x 8 Asynchronous SRAM
8
PD3
DL0 - DL7
WE#1
8
DH8 - DH15
WE#5
8
DL8 - DL15
WE#2
8
DH16 - DH23 WE#6
8
DL16 - DL23
WE#3 STANDBY A14 - A26 TWE# TOE# STANDBY TCLR# TVALID DIRTYIN CLK2
13
8
DH24 - DH31 WE#7 STANDBY
12
8
DL24 - DL31
A2 - A13 TMATCH
8K x 12 Tag Field
8K x 2 Status
DIRTYOUT
drw 01 The IDT logo is a registered trademark of Integrated Device Technology, Inc. PowerPC is a trademark of IBM. Computerbus is trademark of Burndy.
COMMERCIAL TEMPERATURE RANGE
©1996 Integrated Device Technology, Inc.
JUNE 1996
DSC-3608/2
1
IDT7MPV6253/55/56 256KB/512KB CMOS SECONDARY CACHE MODULES FOR THE PowerPC
COMMERCIAL TEMPERATURE RANGE
FUNCTIONAL BLOCK DIAGRAM IDT7MPV6255 – 256KB PIPELINED BURST VERSION
WE#0 WE#1 WE#2 WE#3 CLK 1 CLK0 WE#4 WE#5 WE#6 WE#7 SRAM OE#0 SRAM ADS#0 CNT EN#0 STANDBY BURST MODE A14 - A28
15
32K x 32 Pipelined Burst SRAM
32
DH 0-31
32K x 32 Pipelined Burst SRAM
32
DL0-31 PD0 PD1 PD2 PD3
A14 - A26 TWE# TOE# STANDBY TCLR# TVALID DIRTYIN CLK2
13
12
A2 - A13 TMATCH
8K x 12 Tag Field
8K x 2 Status
DIRTYOUT
drw 02
RECOMMENDED DC OPERATING CONDITIONS
Symbol VCC3 VCC5 GND VIH VIL Parameter Supply Voltage Supply Voltage Supply Voltage Input High Voltage Min. 3.14 4.75 0 2.2 Typ. 3.3 5.0 0 — — Max. 3.6 5.25 0.0 VCC + 0.3 0.8 Unit V V V V V
tbl 01
ABSOLUTE MAXIMUM RATINGS
Symbol Rating Value –0.5 to +4.6 0 to +70 –10 to +85 –55 to +125 50 Unit V °C °C °C mA VTERM Terminal Voltage with Respect for VCC3 to GND TA TBIAS TSTG IOUT Operating Temperature Temperature Under Bias Storage Temperature DC Output Current
Input Low Voltage –0.5(1)
NOTE: 1. VIL = –1.0V for pulse width less than 5ns, once per cycle.
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Power Plane VCC3 VCC5 Ambient Temperature 0°C to +70°C 0°C to +70°C GND 0V 0V VCC 3.3V +10/-5% 5.0V ± 5%
tbl 02
NOTE: tbl 03 Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
SRAM ACCESS TIMES
Module Speed 66MHz Asych 15ns Burst(1) 8.5ns Tag 10ns
tbl 04
NOTE: 1. Burst SRAMs are measured by Clock to Data Out (tCD).
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IDT7MPV6253/55/56 256KB/512KB CMOS SECONDARY CACHE MODULES FOR THE PowerPC
COMMERCIAL TEMPERATURE RANGE
FUNCTIONAL BLOCK DIAGRAM IDT7MPV6256 – 512KB PIPELINED BURST VERSION
WE#0 WE#1 WE#2 WE#3 CLK1 WE#4 WE#5 WE#6 WE#7 CLK0 SRAM OE#0 SRAM ADS#0 CNT EN#0 STANDBY BURST MODE A13 - A28
16
32K x 32 Pipelined Burst SRAM
32
WE#0 WE#1 WE#2 WE#3 CLK1 WE#4 WE#5 WE#6 WE#7 CLK0
32K x 32 Pipelined Burst SRAM
32
DH0-31 32K x 32 Pipelined Burst SRAM 32K x 32 Pipelined Burst SRAM
DH0-31
32
32
DL0-31 SRAM OE#1 SRA.