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IL217AT Dataheets PDF



Part Number IL217AT
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
Datasheet IL217AT DatasheetIL217AT Datasheet (PDF)

IL215AT/216AT/217AT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES Package Dimensions in Inches (mm) • High Current Transfer Ratio, IF=1 mA IL215AT, 20% Minimum IL216AT, 50% Minimum IL217AT, 100% Minimum Isolation Voltage, 2500 VACRMS Electrical Specifications Similar to Standard 6 Pin Coupler Industry Standard SOIC-8 Surface Mountable Package Standard Lead Spacing, .05" Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A) Compatible with Dual Wave, Vapor Ph.

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IL215AT/216AT/217AT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES Package Dimensions in Inches (mm) • High Current Transfer Ratio, IF=1 mA IL215AT, 20% Minimum IL216AT, 50% Minimum IL217AT, 100% Minimum Isolation Voltage, 2500 VACRMS Electrical Specifications Similar to Standard 6 Pin Coupler Industry Standard SOIC-8 Surface Mountable Package Standard Lead Spacing, .05" Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A) Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering Underwriters Lab File #E52744 (Code Letter P) .120±.005 (3.05±.13) .240 (6.10) Pin One ID .192±.005 (4.88±.13) .004 (.10) .008 (.20) .050 (1.27) typ. .021 (.53) Anode 1 .154±.005 Cathode 2 C L (3.91±.13) NC 3 NC 4 .016 (.41) .015±.002 (.38±.05) .008 (.20) 40° 8 7 6 5 NC Base Collector Emitter • • • • • • • 7° .058±.005 (1.49±.13) .125±.005 (3.18±.13) Lead Coplanarity ±.0015 (.04) max. 5° max. R.010 (.25) max. .020±.004 (.15±.10) 2 plcs. TOLERANCE: ± .005 (unless otherwise noted) DESCRIPTION The IL215AT/216AT/217AT is an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL215AT/ 216AT/217AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating throughholes requirements, this package conforms to standards for surface mounted devices. The high CTR at low input current is designed for low power consumption requirements such as CMOS microprocessor interfaces. Maximum Ratings Emitter Peak Reverse Voltage ............................................ 6.0 V Continuous Forward Current ............................... 60 mA Power Dissipation at 25°C .................................. 90 mW Derate Linearly from 25°C ............................ 1.2 mW/°C Detector Collector-Emitter Breakdown Voltage ..................... 30 V Emitter-Collector Breakdown Voltage ....................... 7 V Collector-Base Breakdown Voltage ........................ 70 V Power Dissipation ............................................. 150 mW Derate Linearly from 25°C ............................ 2.0 mW/°C Package Total Package Dissipation at 25°C Ambient (LED + Detector) ........................................... 280 mW Derate Linearly from 25°C ............................ 3.3 mW/°C Storage Temperature .......................... –55°C to +150°C Operating Temperature ...................... –55°C to +100°C Soldering Time at 260°C .................................... 10 sec. Characteristics (TA=25°C) Symbol Min. Typ. Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Collector-Emitter Emitter-Collector Collector-Emitter Dark Current Collector-Emitter Capacitance Package DC Current Transfer IL215AT IL216AT IL217AT Collector-Emitter Saturation Voltage Isolation Test Voltage Capacitance, Input to Output Resistance, Input to Output Switching Time VF IR CO 1.0 0.1 25 Max. Unit 1.5 100 V µA pF Condition IF=1 mA VR=6.0 V V R=0 IC=10 µA IE=10 µA VCE=10 V, IF =0 V CE=0 IF=1 mA VCE=5 V BVCEO BVECO I CEOdark CCE CTRDC 30 7 5 10 50 V V nA pF % 20 50 100 VCE sat V IO C IO R IO tON, tOFF 2500 50 80 130 0.4 VACRMS 0.5 100 3.0 pF GΩ µs IC=0.1 mA, IF=1 mA IC=2 mA, RE=100 Ω, VCE=10 V Specifications subject to change. Semiconductor Group 4–7 10.95 Figure 1. Forward voltage versus forward current Figure 2. Normalized non-saturated and saturated CTRce versus LED current NCTRce - Normalized CTRce 1.4 VF - Forward Voltage - V 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Ta = -55°C Ta = 25°C 1.0 Normalized to: Vce = 10 V IF = 10 mA Ta = 25°C Vce = 5 V Ta = 85°C 0.5 Vce = 0.4 V 0.0 .1 1 10 IF - LED Current - mA 100 1 10 IF - Forward Current - mA 100 Figure 3. Collector-emitter current versus LED current Figure 4. Normalized collector-base photocurrent versus LED current NIcb - Normalized Icb 150 Ta = 25°C Vce = 10 V 100 Ice - Collector-emitter Current - mA 100 Normalized to: Vcb = 9.3 V IF = 1 mA 10 Ta = 25 °C 1 .1 .1 1 10 IF - LED Current - mA 100 50 Vce = 0.4 V 0 .1 1 10 IF - LED Current - mA 100 Icb - Collector-base Current - µA Figure 5. Collector-base photocurrent versus LED current 1000 100 10 1 .1 .1 Ta = 25°C Vcb = 9.3 V Iceo - Collector-Emitter - nA Figure 6. Collector-emitter leakage current versus temperature 5 10 4 10 3 10 10 2 10 1 Vce = 10V TYPICAL 10 0 10 -1 10 -2 -20 1 10 100 IF - LED Current - mA Figure 7. Normalized saturated HFE versus base current and temperature 0 20 40 60 80 100 Ta - Ambient Temperature - °C NHFE(sat) - Normalized Saturated HFE 1.5 1.0 25°C 50°C Normalized to: Ib = 20µA Vce = 10 V Ta = 25 °C NCTRce - Normalized CTRce 2.0 70°C Figure 8. Normalized non-saturated and saturated CTRce versus LED current 2.0 Norm.


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