Document
IL215AT/216AT/217AT
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
FEATURES
Package Dimensions in Inches (mm)
• High Current Transfer Ratio, IF=1 mA
IL215AT, 20% Minimum IL216AT, 50% Minimum IL217AT, 100% Minimum Isolation Voltage, 2500 VACRMS Electrical Specifications Similar to Standard 6 Pin Coupler Industry Standard SOIC-8 Surface Mountable Package Standard Lead Spacing, .05" Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A) Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering Underwriters Lab File #E52744 (Code Letter P)
.120±.005 (3.05±.13) .240 (6.10) Pin One ID .192±.005 (4.88±.13) .004 (.10) .008 (.20) .050 (1.27) typ. .021 (.53) Anode 1 .154±.005 Cathode 2 C L (3.91±.13) NC 3 NC 4 .016 (.41) .015±.002 (.38±.05) .008 (.20) 40° 8 7 6 5 NC Base Collector Emitter
• • • • • • •
7° .058±.005 (1.49±.13) .125±.005 (3.18±.13) Lead Coplanarity ±.0015 (.04) max.
5° max. R.010 (.25) max.
.020±.004 (.15±.10) 2 plcs.
TOLERANCE: ± .005 (unless otherwise noted)
DESCRIPTION
The IL215AT/216AT/217AT is an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL215AT/ 216AT/217AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating throughholes requirements, this package conforms to standards for surface mounted devices. The high CTR at low input current is designed for low power consumption requirements such as CMOS microprocessor interfaces. Maximum Ratings
Emitter Peak Reverse Voltage ............................................ 6.0 V Continuous Forward Current ............................... 60 mA Power Dissipation at 25°C .................................. 90 mW Derate Linearly from 25°C ............................ 1.2 mW/°C Detector Collector-Emitter Breakdown Voltage ..................... 30 V Emitter-Collector Breakdown Voltage ....................... 7 V Collector-Base Breakdown Voltage ........................ 70 V Power Dissipation ............................................. 150 mW Derate Linearly from 25°C ............................ 2.0 mW/°C Package Total Package Dissipation at 25°C Ambient (LED + Detector) ........................................... 280 mW Derate Linearly from 25°C ............................ 3.3 mW/°C Storage Temperature .......................... –55°C to +150°C Operating Temperature ...................... –55°C to +100°C Soldering Time at 260°C .................................... 10 sec.
Characteristics (TA=25°C)
Symbol Min. Typ. Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Collector-Emitter Emitter-Collector Collector-Emitter Dark Current Collector-Emitter Capacitance Package DC Current Transfer IL215AT IL216AT IL217AT Collector-Emitter Saturation Voltage Isolation Test Voltage Capacitance, Input to Output Resistance, Input to Output Switching Time VF IR CO 1.0 0.1 25 Max. Unit 1.5 100 V µA pF Condition IF=1 mA VR=6.0 V V R=0 IC=10 µA IE=10 µA VCE=10 V, IF =0 V CE=0 IF=1 mA VCE=5 V
BVCEO BVECO I CEOdark CCE CTRDC
30 7 5 10 50
V V nA pF %
20 50 100 VCE sat V IO C IO R IO tON, tOFF 2500
50 80 130 0.4 VACRMS 0.5 100 3.0 pF GΩ µs IC=0.1 mA, IF=1 mA
IC=2 mA, RE=100 Ω, VCE=10 V
Specifications subject to change.
Semiconductor Group
4–7
10.95
Figure 1. Forward voltage versus forward current
Figure 2. Normalized non-saturated and saturated CTRce versus LED current
NCTRce - Normalized CTRce
1.4
VF - Forward Voltage - V
1.5
1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1
Ta = -55°C Ta = 25°C
1.0
Normalized to: Vce = 10 V IF = 10 mA Ta = 25°C
Vce = 5 V
Ta = 85°C
0.5
Vce = 0.4 V 0.0 .1 1 10 IF - LED Current - mA 100
1 10 IF - Forward Current - mA
100
Figure 3. Collector-emitter current versus LED current
Figure 4. Normalized collector-base photocurrent versus LED current
NIcb - Normalized Icb
150
Ta = 25°C Vce = 10 V
100
Ice - Collector-emitter Current - mA
100
Normalized to: Vcb = 9.3 V IF = 1 mA 10 Ta = 25 °C
1 .1 .1 1 10 IF - LED Current - mA 100
50 Vce = 0.4 V 0 .1 1 10 IF - LED Current - mA 100
Icb - Collector-base Current - µA
Figure 5. Collector-base photocurrent versus LED current
1000 100 10 1 .1
.1
Ta = 25°C Vcb = 9.3 V
Iceo - Collector-Emitter - nA
Figure 6. Collector-emitter leakage current versus temperature 5 10 4 10 3 10 10 2
10
1
Vce = 10V TYPICAL
10 0 10 -1 10 -2 -20
1
10
100
IF - LED Current - mA
Figure 7. Normalized saturated HFE versus base current and temperature
0 20 40 60 80 100 Ta - Ambient Temperature - °C
NHFE(sat) - Normalized Saturated HFE
1.5 1.0
25°C
50°C
Normalized to: Ib = 20µA Vce = 10 V Ta = 25 °C
NCTRce - Normalized CTRce
2.0
70°C
Figure 8. Normalized non-saturated and saturated CTRce versus LED current 2.0 Norm.