IL4118

IL4116 700 V IL4117 800 V IL4118 600 V FEATURES High Input Sensltlvity: IFT=1.3 mA, PF=1.0; IFT=3.5 mA, Typlcal PF < 1.0 Zero Voltage Crosslng 600/700/800 V Blocklng Voltage 300 mA On-State Current High Statlc dv/dt 10,000 V/µsec., typical Inverse Parallel SCRs Provide Commutatlng dv/dt >10 KV/msec. Very Low Leakage <10 mA Isolation Test Voltage from Double Molded Package 5300 VACRMS Package, 6-Pln DIP Underwriters Lab File #E52744 DESCRIPTION The IL411x consists of an AlGaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual inline package, using high insulation double molded, over/under leadframe construction. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 1.3 mA(DC). The IL411x uses two discrete SCRs resulting in a commutating dV/dt greater than 10 KV/ms The use of a proprietary dv/dt clamp results in a static dv/dt of greater than 10 KV/µs. This clamp circuit has a MOSFET that is enhanced when high dv/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver. The zero cross line voltage detection circuit consists of two enhancement MOSFETS and a photodiode. The inhibit voltage of the network ...