Document
Philips Semiconductors
Product specification
Thyristors sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications.
BTA151 series
QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BTA151Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 7.5 12 100 650R 650 7.5 12 100 800R 800 7.5 12 100 V A A A
PINNING - SOT82
PIN 1 2 3 tab DESCRIPTION cathode anode gate anode
PIN CONFIGURATION
SYMBOL
a
k
1
2
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb ≤ 109 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -650R -800R 5001 6501 800 7.5 12 100 110 50 50 2 5 12 5 0.5 150 125 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C
VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current
I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.200
Philips Semiconductors
Product specification
Thyristors sensitive gate
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. -
BTA151 series
TYP. 60
MAX. 1.3 -
UNIT K/W K/W
Thermal resistance junction to mounting base Thermal resistance in free air junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 23 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C MIN. 0.25 TYP. 2 10 7 1.4 0.6 0.4 0.1 MAX. 4 40 16 1.75 1.5 0.5 UNIT mA mA mA V V V mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VD = 67% VDRM(max); Tj = 125 ˚C; exponential waveform Gate open circuit RGK = 100 Ω ITM = 40 A; VD = VDRM; IG = 0.1 A; dIG/dt = 5 A/µs VD = 67% VDRM(max); ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω MIN. TYP. MAX. UNIT V/µs V/µs µs µs
tgt tq
50 200 -
130 1.