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BTA151-800R Dataheets PDF



Part Number BTA151-800R
Manufacturers NXP
Logo NXP
Description Thyristors sensitive gate
Datasheet BTA151-800R DatasheetBTA151-800R Datasheet (PDF)

Philips Semiconductors Product specification Thyristors sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. BTA151 series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BTA151Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 7.5 12 100 650R 650 7.5 .

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Philips Semiconductors Product specification Thyristors sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. BTA151 series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BTA151Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 7.5 12 100 650R 650 7.5 12 100 800R 800 7.5 12 100 V A A A PINNING - SOT82 PIN 1 2 3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURATION SYMBOL a k 1 2 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb ≤ 109 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -650R -800R 5001 6501 800 7.5 12 100 110 50 50 2 5 12 5 0.5 150 125 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Thyristors sensitive gate THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. - BTA151 series TYP. 60 MAX. 1.3 - UNIT K/W K/W Thermal resistance junction to mounting base Thermal resistance in free air junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 23 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C MIN. 0.25 TYP. 2 10 7 1.4 0.6 0.4 0.1 MAX. 4 40 16 1.75 1.5 0.5 UNIT mA mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VD = 67% VDRM(max); Tj = 125 ˚C; exponential waveform Gate open circuit RGK = 100 Ω ITM = 40 A; VD = VDRM; IG = 0.1 A; dIG/dt = 5 A/µs VD = 67% VDRM(max); ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω MIN. TYP. MAX. UNIT V/µs V/µs µs µs tgt tq 50 200 - 130 1.


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