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Philips Semiconductors
Product specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Passivated high commutation triacs in a plastic envelope suitable for surface mounting intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature without the aid of a snubber.
BTA204S series B and C
BTA204M series B and C QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. MAX. 600B 600C 600 4 25 MAX. UNIT 800B 800C 800 4 25 BTA204S (or BTA204M)- 500B BTA204S (or BTA204M)- 500C Repetitive peak 500 off-state voltages RMS on-state current 4 Non-repetitive peak on-state 25 current
VDRM IT(RMS) ITSM
V A A
PINNING - SOT428
PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2 1 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 4 -800 800 UNIT V A
I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
-
25 27 3.1 100 2 5 5 0.5 150 125
A A A2s A/µs A V W W ˚C ˚C
over any 20 ms period
-40 -
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. December 1998 1 Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS
BTA204S series B and C
BTA204M series B and C
MIN. -
TYP. 75
MAX. 3.0 3.7 -
UNIT K/W K/W K/W
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.2 junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current
2
CONDITIONS BTA204 (or BTA204M)VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C
MIN.
TYP.
MAX. ...B ...C 35 35 35 20 30 20 20 1.7 1.5 0.5
UNIT
0.25 -
1.4 0.7 0.4 0.1
50 50 50 30 45 30 30
mA mA mA mA mA mA mA V V V mA
IL
Latching current
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt dIcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS BTA204S (or BTA204M)VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 4 A; dVcom/dt = 20V/µs; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. ...B 1000 6 ...C 1000 3 2 V/µs A/ms µs TYP. UNIT
2 Device does not trigger in the T2-, G+ quadrant. December 1998 2 Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
BTA204S series B and C
BTA204M series B and C
8 7 6 5 4 3 2 1 0
Ptot / W
BT136
Tmb(max) / C
101 104
5
IT(RMS) / A
BT136
1
= 180 120 90 60 30
4
107 110 113 116 119
107 C
3
2
1
122 0 1 2 3 IT(RMS) / A 4 125 5
0 -50
0
50 Tmb / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
BT136
1000
ITSM / A
BT136 IT T ITSM
12 10
time
IT(RMS) / A
Tj initial = 25 C max 100 dIT /dt limit
8 6 4
T2- G+ quadrant
2
10 10us
100us
1ms T/s
10ms
100ms
0 0.01
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 107˚C.
VGT(Tj) VGT(25 C)
30 25 20 15 10 5 0
ITSM / A
BT136
1.6
IT T I TSM time
BT136
1.4 1.2 1 0.8 0.6 0.4 -50
Tj initial = 25 C max
1
10 100 Number of cycles at 50Hz
1000
0
50 Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
December 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
BTA204S seri.