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BTA204S-800B Dataheets PDF



Part Number BTA204S-800B
Manufacturers NXP
Logo NXP
Description Three quadrant triacs high commutation
Datasheet BTA204S-800B DatasheetBTA204S-800B Datasheet (PDF)

Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Passivated high commutation triacs in a plastic envelope suitable for surface mounting intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature without the aid of a snubber. BTA204S series B and C BTA204M series B and C QUICK REFERENCE DATA SYMBOL PARAMETER MAX.

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Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Passivated high commutation triacs in a plastic envelope suitable for surface mounting intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature without the aid of a snubber. BTA204S series B and C BTA204M series B and C QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. 600B 600C 600 4 25 MAX. UNIT 800B 800C 800 4 25 BTA204S (or BTA204M)- 500B BTA204S (or BTA204M)- 500C Repetitive peak 500 off-state voltages RMS on-state current 4 Non-repetitive peak on-state 25 current VDRM IT(RMS) ITSM V A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2 PIN CONFIGURATION tab SYMBOL T2 T1 2 1 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 4 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 25 27 3.1 100 2 5 5 0.5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. December 1998 1 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS BTA204S series B and C BTA204M series B and C MIN. - TYP. 75 MAX. 3.0 3.7 - UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.2 junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current 2 CONDITIONS BTA204 (or BTA204M)VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C MIN. TYP. MAX. ...B ...C 35 35 35 20 30 20 20 1.7 1.5 0.5 UNIT 0.25 - 1.4 0.7 0.4 0.1 50 50 50 30 45 30 30 mA mA mA mA mA mA mA V V V mA IL Latching current IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt dIcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS BTA204S (or BTA204M)VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 4 A; dVcom/dt = 20V/µs; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. ...B 1000 6 ...C 1000 3 2 V/µs A/ms µs TYP. UNIT 2 Device does not trigger in the T2-, G+ quadrant. December 1998 2 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA204S series B and C BTA204M series B and C 8 7 6 5 4 3 2 1 0 Ptot / W BT136 Tmb(max) / C 101 104 5 IT(RMS) / A BT136 1 = 180 120 90 60 30 4 107 110 113 116 119 107 C 3 2 1 122 0 1 2 3 IT(RMS) / A 4 125 5 0 -50 0 50 Tmb / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. BT136 1000 ITSM / A BT136 IT T ITSM 12 10 time IT(RMS) / A Tj initial = 25 C max 100 dIT /dt limit 8 6 4 T2- G+ quadrant 2 10 10us 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 107˚C. VGT(Tj) VGT(25 C) 30 25 20 15 10 5 0 ITSM / A BT136 1.6 IT T I TSM time BT136 1.4 1.2 1 0.8 0.6 0.4 -50 Tj initial = 25 C max 1 10 100 Number of cycles at 50Hz 1000 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. December 1998 3 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA204S seri.


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