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DISCRETE SEMICONDUCTORS
DATA SHEET
BTA204S series D, E and F BTA204M series D, E and F Three quadrant triacs guaranteed commutation
Product specification December 1998
Philips Semiconductors
Product specification
Three quadrant triacs guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation triacs in a plastic envelope suitable for surface mounting, intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers.
BTA204S series D, E and F BTA204M series D, E and F
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. MAX. 600D 600E 600F 600 4 25 MAX. UNIT 800E 800F 800 4 25 BTA204S (or BTA204M)- 500D BTA204S (or BTA204M)- 500E BTA204S (or BTA204M)- 500F Repetitive peak 500 off-state voltages RMS on-state current 4 Non-repetitive peak on-state 25 current
VDRM IT(RMS) ITSM
V A A
PINNING - SOT428
PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2 1 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 4 -800 800 UNIT V A
It dIT/dt IGM VGM PGM PG(AV) Tstg Tj
2
I t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
2
-
25 27 3.1 100 2 5 5 0.5 150 125
A A A2s A/µs A V W W ˚C ˚C
over any 20 ms period
-40 -
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs guaranteed commutation
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS
BTA204S series D, E and F BTA204M series D, E and F
MIN. -
TYP. 75
MAX. 3.0 3.7 -
UNIT K/W K/W K/W
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current
2
CONDITIONS BTA204S (or BTA204M)VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C
MIN.
TYP. ...D
MAX. ...E 10 10 10 12 18 12 12 1.7 1.5 0.5 ...F 25 25 25 20 30 20 20
.