BTA216X

DISCRETE SEMICONDUCTORS DATA SHEET BTA216X series B Three quadrant triacs high commutation Product specification October 1997 1;3 Semiconductors Three quadrant triacs high commutation Product specification BTA216X series B GENERAL DESCRIPTION Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. MAX. UNIT VDRM IT(RMS) ITSM BTA216XRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current 500B 500 16 140 600B 600 16 140 800B 800 16 140 V A A PINNING - SOT186A PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate case isolated PIN CONFIGURATION case 12 3 SYMBOL T2 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM Repetitive peak off-state voltages -500 - 5001 IT(RMS) ITSM I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature full sine wave; Ths ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7...