thyristor characteristic. BTS115A Datasheet

BTS115A characteristic. Datasheet pdf. Equivalent

BTS115A Datasheet
Recommendation BTS115A Datasheet
Part BTS115A
Description TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
Feature BTS115A; TEMPFET® BTS 115A Features q q q q q N channel Logic level Enhancement mode Temperature sensor wi.
Manufacture Siemens Semiconductor Group
Datasheet
Download BTS115A Datasheet




Siemens Semiconductor Group BTS115A
TEMPFET®
Features
q N channel
q Logic level
q Enhancement mode
q Temperature sensor with thyristor characteristic
q The drain pin is electrically shorted to the tab
BTS 115A
1 23
Pin 1 2 3
GDS
Type
BTS 115A
VDS
50 V
ID
15.5 A
RDS(on)
0.12
Package
TO-220AB
Ordering Code
C67078-S5004-A2
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 k
Gate-source voltage
Continuous drain current, TC = 25 °C
ISO drain current
TC = 85 °C, VGS = 4.5 V, VDS = 0.5 V
Pulsed drain current, TC = 25 °C
Short circuit current, Tj = – 55 ... + 150 °C
Short circuit dissipation, Tj = – 55 ... + 150 °C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Symbol
VDS
VDGR
VGS
ID
ID-ISO
ID puls
ISC
PSCmax
Ptot
Tj, Tstg
Rth JC
Rth JA
Values
50
50
± 10
15.5
3.2
62
37
550
50
– 55 ... + 150
E
55/150/56
2.5
75
Unit
V
A
W
°C
K/W
Semiconductor Group
1
04.97



Siemens Semiconductor Group BTS115A
BTS 115A
Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
Gate threshold voltage
VGS = VDS, ID = 1.0 mA
Zero gate voltage drain current
VGS = 0 V, VDS = 50 V
Tj = 25 °C
Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
Drain-source on-state resistance
VGS = 4.5 V, ID = 7.8 A
V(BR)DSS
VGS(th)
I DSS
I GSS
RDS(on)
Dynamic Characteristics
Forward transconductance
VDS 2 × ID × R ,DS(on)max ID =7.8 A
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50
Turn-off time toff, (toff = td(off) + tf)
VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
50
1.5
5.5
Values
typ. max.
Unit
V
––
2.0 2.5
µA
0.1 1.0
10 100
10 100 nA
2 4 µA
0.09 0.12
9.5 –
S
pF
550 735
220 320
85 150
15 25 ns
70 100
70 90
50 70
Semiconductor Group
2



Siemens Semiconductor Group BTS115A
BTS 115A
Electrical Characteristics (cont’d)
at Tj = 25 °C, unless otherwise specified.
Parameter
Symbol
min.
Reverse Diode
Continuous source current
Pulsed source current
Diode forward on-voltage
I F = 34 A, VGS = 0
Reverse recovery time
I F = I S, diF/dt = 100 A/µs, VR = 30 V
Reverse recovery charge
I F = IS, diF/dt = 100 A/µs, VR = 30 V
IS
I SM
VSD
trr
Qrr
Temperature Sensor
Forward voltage
I TS(on) = 5.0 mA, Tj = – 55 ... + 150 °C
Sensor override, tp 100 µs
Tj = – 55 ... + 160 °C
Forward current
Tj = – 55 ... + 150 °C
Sensor override, tp 100 µs
Tj = – 55 ... + 160 °C
Holding current, VTS(off) = 5 V, Tj = 25 °C
Tj = 150 °C
Switching temperature
VTS = 5 V
Turn-off time
VTS = 5 V, ITS(on) = 2 mA
VTS(on)
ITS(on)
IH
TTS(on)
toff
0.05
0.05
150
0.5
Values
typ. max.
Unit
– 15.5 A
– 62
V
1.5 1.8
60 –
ns
0.10 –
µC
V
1.3 1.4
– 10
mA
–5
– 600
0.1 0.5
0.2 0.3
––
°C
µs
– 2.5
Semiconductor Group
3







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