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thyristor characteristic. BTS115A Datasheet |
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TEMPFET®
Features
q N channel
q Logic level
q Enhancement mode
q Temperature sensor with thyristor characteristic
q The drain pin is electrically shorted to the tab
BTS 115A
1 23
Pin 1 2 3
GDS
Type
BTS 115A
VDS
50 V
ID
15.5 A
RDS(on)
0.12 Ω
Package
TO-220AB
Ordering Code
C67078-S5004-A2
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Continuous drain current, TC = 25 °C
ISO drain current
TC = 85 °C, VGS = 4.5 V, VDS = 0.5 V
Pulsed drain current, TC = 25 °C
Short circuit current, Tj = – 55 ... + 150 °C
Short circuit dissipation, Tj = – 55 ... + 150 °C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Symbol
VDS
VDGR
VGS
ID
ID-ISO
ID puls
ISC
PSCmax
Ptot
Tj, Tstg
–
–
Rth JC
Rth JA
Values
50
50
± 10
15.5
3.2
62
37
550
50
– 55 ... + 150
E
55/150/56
≤ 2.5
≤ 75
Unit
V
A
W
°C
–
K/W
Semiconductor Group
1
04.97
|
BTS 115A
Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
Gate threshold voltage
VGS = VDS, ID = 1.0 mA
Zero gate voltage drain current
VGS = 0 V, VDS = 50 V
Tj = 25 °C
Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
Drain-source on-state resistance
VGS = 4.5 V, ID = 7.8 A
V(BR)DSS
VGS(th)
I DSS
I GSS
RDS(on)
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × R ,DS(on)max ID =7.8 A
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω
Turn-off time toff, (toff = td(off) + tf)
VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
50
1.5
–
–
–
–
–
5.5
–
–
–
–
–
–
–
Values
typ. max.
Unit
V
––
2.0 2.5
µA
0.1 1.0
10 100
10 100 nA
2 4 µA
Ω
0.09 0.12
9.5 –
S
pF
550 735
220 320
85 150
15 25 ns
70 100
70 90
50 70
Semiconductor Group
2
|
BTS 115A
Electrical Characteristics (cont’d)
at Tj = 25 °C, unless otherwise specified.
Parameter
Symbol
min.
Reverse Diode
Continuous source current
Pulsed source current
Diode forward on-voltage
I F = 34 A, VGS = 0
Reverse recovery time
I F = I S, diF/dt = 100 A/µs, VR = 30 V
Reverse recovery charge
I F = IS, diF/dt = 100 A/µs, VR = 30 V
IS
I SM
VSD
trr
Qrr
Temperature Sensor
Forward voltage
I TS(on) = 5.0 mA, Tj = – 55 ... + 150 °C
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C
Forward current
Tj = – 55 ... + 150 °C
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C
Holding current, VTS(off) = 5 V, Tj = 25 °C
Tj = 150 °C
Switching temperature
VTS = 5 V
Turn-off time
VTS = 5 V, ITS(on) = 2 mA
VTS(on)
ITS(on)
IH
TTS(on)
toff
–
–
–
–
–
–
–
–
0.05
0.05
150
0.5
Values
typ. max.
Unit
– 15.5 A
– 62
V
1.5 1.8
60 –
ns
0.10 –
µC
V
1.3 1.4
– 10
mA
–5
– 600
0.1 0.5
0.2 0.3
––
°C
µs
– 2.5
Semiconductor Group
3
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