BTS118D

HITFETÒ II.Generation BTS 118 D Smart Lowside Power Switch Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown with auto restart · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible P-TO252-3-11 Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) ID(Nom) EAS 42 100 2.4 2 V mW A J Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V DC applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded protection functions. Vbb M HITFET â Current Limitation In Pin 1 Drain OvervoltageProtection Pin 2 and 4 (TAB) Gate-Driving Unit Overtemperature Protection ESD Overload Protection Short circuit Protection Pin 3 Source Complete product spectrum and additional information http://www.infineon.com/hitfet Page 1 2004-03-05 BTS 118 D Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Drain source voltage Supply voltage for full short circuit protection Continuous input voltage1) Continuous input current2) -0.2V £ VIN £ 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation 5) TC = 85 °C 6cm 2 cooling area , TA = 85 °C Unclamped single pulse inductive energy 2) Load dump protection VL...