Document
TEMPFET® BTS 131
Features
q q q q q
N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab
1
2
3
Pin
1 G
2 D
3 S
Type BTS 131
VDS
50 V
ID
25 A
RDS(on)
0.06 Ω
Package TO-220AB
Ordering Code C67078-A5002-A4
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 50 50 ± 10 25 6.5 100 80 1200 75 – 55 ... + 150 E 55/150/56 K/W ≤ 1.67 ≤ 75 °C – W A Unit V
VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg
– –
TC = 25 °C Tj = – 55 ... + 150 °C
Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient
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Rth JC Rth JA
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TEMPFET® BTS 131
Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit
V(BR)DSS
50 – 2.0 – 2.5
V
VGS = 0, ID = 0.25 mA
Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 4.5 V, ID =12 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 12 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω Turn-off time toff, (toff = td(off) + tf) VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω
VGS(th)
1.5
I DSS
– – 1 100 10 300
µA
I GSS
– – 10 2 0.05 100 4 0.06 nA µA Ω –
RDS(on)
gfs
12 17 1050 500 200 25 60 100 75 22
S pF 800 1400 750 300 40 90 130 95 ns
Ciss Coss
–
Crss
–
td(on) tr td(off) tf
– – – –
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TEMPFET® BTS 131
Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 25 A, VGS = 0 V Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Temperature Sensor Forward voltage I TS(on) = 5 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Holding current, VTS(off) = 5 V, Switching temperature VTS = 5 V Turn-off time Values typ. max. Unit
IS ISM VSD
– – –
– – 1.3 150 1.0
25 100
A V
1.8 ns – µC –
t rr
–
Q rr
–
VTS(on)
– – 1.3 – – – 0.1 0.2 – – 1.4 10
V
ITS(on)
– – 5 600 0.5 0.3
mA
Tj = 25 °C Tj = 150 °C
IH TTS(on)
0.05 0.05 150
°C – µs 0.5 2.5
toff
VTS = 5 V, ITS(on) = 2 mA
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TEMPFET® BTS 131
Examples for short-circuit protection at Tj = – 55 ... + 150 °C, unless otherwise specified. Parameter Symbol 1 Examples 2 – Unit
Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time Tj = 25 °C, before short circuit
VDS VGS ISC PSC tSC(off)
15 6.2 ≤ 80 1200 25
30 4.1 ≤ 37 1100 25
– – – – –
V A W ms
Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = – 55 ... + 150 ˚C
Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = – 55 ... + 150 °C
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TEMPFET® BTS 131
Max. power dissipation Ptot = f (TC)
Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS
Typical output characteristics ID = f (VDS) Parameter: tp = 80 µs
Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 °C
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TEMPFET® BTS 131
Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 12 A, VGS = 4.5 V
Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA (spread)
Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 µs, VDS = 25 V
Typ. transconductance gfs = f (ID) Parameter: tp = 80 µs, VDS = 25 V
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TEMPFET® BTS 131
Continuous drain current ID = f (TC) Parameter: VGS ≥ 4.5 V
Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 µs (spread)
Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 10 V, VDS = 0
Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz
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TEMPFET® BTS 131
Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T
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TEMPFET® BTS 131
TO 220 AB Standard
Ordering Code C67078-A5002-A4
9.9 9.5
2.8
3.7
4.4 1.3
12.8
17.5
1
4.6
3)
9.2
1)
0.75 2.54 1.05 2.54
0.5 2.4
GPT05155
1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05
13.5
2)
15.6
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TEMPFET® BTS 131
Edition 04.97 .