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BTS131 Dataheets PDF



Part Number BTS131
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description MOSFET
Datasheet BTS131 DatasheetBTS131 Datasheet (PDF)

TEMPFET® BTS 131 Features q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 131 VDS 50 V ID 25 A RDS(on) 0.06 Ω Package TO-220AB Ordering Code C67078-A5002-A4 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed .

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TEMPFET® BTS 131 Features q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 131 VDS 50 V ID 25 A RDS(on) 0.06 Ω Package TO-220AB Ordering Code C67078-A5002-A4 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 50 50 ± 10 25 6.5 100 80 1200 75 – 55 ... + 150 E 55/150/56 K/W ≤ 1.67 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient 1 Rth JC Rth JA 1 19.02.04 TEMPFET® BTS 131 Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit V(BR)DSS 50 – 2.0 – 2.5 V VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 4.5 V, ID =12 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 12 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω Turn-off time toff, (toff = td(off) + tf) VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω VGS(th) 1.5 I DSS – – 1 100 10 300 µA I GSS – – 10 2 0.05 100 4 0.06 nA µA Ω – RDS(on) gfs 12 17 1050 500 200 25 60 100 75 22 S pF 800 1400 750 300 40 90 130 95 ns Ciss Coss – Crss – td(on) tr td(off) tf – – – – 2 19.02.04 TEMPFET® BTS 131 Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 25 A, VGS = 0 V Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Temperature Sensor Forward voltage I TS(on) = 5 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Holding current, VTS(off) = 5 V, Switching temperature VTS = 5 V Turn-off time Values typ. max. Unit IS ISM VSD – – – – – 1.3 150 1.0 25 100 A V 1.8 ns – µC – t rr – Q rr – VTS(on) – – 1.3 – – – 0.1 0.2 – – 1.4 10 V ITS(on) – – 5 600 0.5 0.3 mA Tj = 25 °C Tj = 150 °C IH TTS(on) 0.05 0.05 150 °C – µs 0.5 2.5 toff VTS = 5 V, ITS(on) = 2 mA 3 19.02.04 TEMPFET® BTS 131 Examples for short-circuit protection at Tj = – 55 ... + 150 °C, unless otherwise specified. Parameter Symbol 1 Examples 2 – Unit Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time Tj = 25 °C, before short circuit VDS VGS ISC PSC tSC(off) 15 6.2 ≤ 80 1200 25 30 4.1 ≤ 37 1100 25 – – – – – V A W ms Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = – 55 ... + 150 ˚C Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = – 55 ... + 150 °C 4 19.02.04 TEMPFET® BTS 131 Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 µs Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 °C 5 19.02.04 TEMPFET® BTS 131 Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 12 A, VGS = 4.5 V Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA (spread) Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 µs, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 µs, VDS = 25 V 6 19.02.04 TEMPFET® BTS 131 Continuous drain current ID = f (TC) Parameter: VGS ≥ 4.5 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 µs (spread) Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 10 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz 7 19.02.04 TEMPFET® BTS 131 Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T 8 19.02.04 TEMPFET® BTS 131 TO 220 AB Standard Ordering Code C67078-A5002-A4 9.9 9.5 2.8 3.7 4.4 1.3 12.8 17.5 1 4.6 3) 9.2 1) 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 13.5 2) 15.6 9 19.02.04 TEMPFET® BTS 131 Edition 04.97 .


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