BTS149

HITFET=BTS 149 Smart Lowside Power Switch Features Logic Level Input Input Protection (ESD) =Thermal shutdown with latch Overload protection Short circuit protection Overvoltage protection Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 18 30 19 V mΩ A A 6000 mJ limitation Status feedback with external input resistor Analog driving possible Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V and 24 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS  chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD M D rain 2 1 IN dv /d t lim ita tio n C u rre n t lim ita tio n O ve rvoltag e p rotection ESD O v erloa d pro te ctio n O ve rte m pe rature p ro te ctio n Sh ho rt circ c ircu it S ort uit p protection ro te ctio n S o u rce 3 H IT F E T Page 1 2004-02-02 BTS 149 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ VIN ≤ 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 19 A Electrostatic discharge volta...