BTS244Z

BTS 244 Z Speed TEMPFET
N-Channel
Enhancement mode
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with 1 5 VPT05166 thyristor characteristics
Overtemperature protection
Avalanche rated Type BTS 244 Z VDS 55 V RDS(on) 13 m
Package P-TO220-5-3 P-TO220-5-62 TO-220-5-43 Ordering Code Q67060-S6000-A2 Q67060-S6003-A2 Q67060-S6008 D Pin 3 and TAB G Pin 1 A Pin 2 Temperature Sensor K Pin 4 S Pin 5 Pin 1 2 3 4 5 Symbol G A D K S Function Gate Anode Temperature Sensor Drain Cathode Temperature Sensor Source 1 2000-05-17 BTS 244 Z Maximum Ratings Parameter Drain source voltage Drain-gate voltage , RGS = 20 k
Gate source voltage Nominal load current (ISO 10483) VGS = 10 V, VDS VGS = 4.5 V, VDS 0.5 V, TC = 85 °C Symbol VDS V Value 55 55 Unit V DGR VGS ID(ISO) 20 A 19 26 0.5 V, TC = 85 °C Continuous drain current 1) TC = 100 °C, VGS = 4.5V Pulsed drain current Avalanche energy, single pulse ID = 19 A, RGS = 25
Power dissipation TC = 25 °C Operating temperature 2) Peak temperature ( single event ) Storage temperature DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 ID ID puls EAS Ptot Tj Tjpeak Tstg 35 188 1.65 170 -40 ...+175 200 -55 ... +150 E 40/150/56 J W °C 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C 2 2000-05-17 BTS 244 Z Thermal Characteristics Parameter Characteristics junction - case: Thermal resistance...