BTS3118D

Smart Low Side Power Switch Power HITFET BTS 3118D Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) I D(Nom) EAS 42 100 2.4 2 V m
A J P / PG-TO252-3-11 Application  All kinds of resistive, inductive and capacitive loads in switching or linear applications  μC compatible power switch for 12 V DC applications  Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb HITFET In Pin 1 Gate-Driving Unit Current Limitation OvervoltageProtection ESD Overload Protection Overtemperature Protection Short circuit Protection Drain Pin 2 and 4 (TAB) Source Pin 3 M Datasheet 1 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3118D Maximum Ratings at Tj = 25 °C, unless otherwise specified 1) Parameter Symbol Value Drain source voltage VDS 42 Drain source voltage for short circuit protection Tj = -40 ... +150 °C VDS(SC) 20 Continuous input current -0.2V  VIN  10V VIN < -0.2V or VIN > 10V IIN no limit | IIN |  2 Operating temperature Tj -40 ... +150 Storage temperature Power dissipation 4) Tstg Ptot -55 ... +150 TC = 85 °C...