Document
Smart High-Side Power Switch
PROFET® BTS409L1
Features
Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection (including load dump) Fast demagnetization of inductive loads
Reverse battery protection1) Undervoltage and overvoltage shutdown with
auto-restart and hysteresis Open drain diagnostic output Open load detection in ON-state CMOS compatible input Loss of ground and loss of Vbb protection Electrostatic discharge (ESD) protection Green Product (RoHS compliant) AEC Qualified
Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation
Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr)
43 V 5.0 ... 34 V
200 m 2.3 A
4A
PG-TO263-5-2
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads All types of resistive, inductive and capacitve loads Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.
2 IN
Voltage source
V Logic Voltage sensor
ESD 4 ST
Logic
Overvoltage protection
Current
Gate
limit protection
+ Vbb 3
Charge puLmevpel Rsehcifttifeier r
Limit for unclampe idnd. loads
Open load Short to Vbb
detection
OUT
Temperature
5
sensor
RO
Load
GND
1
Signal GND
PROFET
GND
Load GND
1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.
Data Sheet
1
2013-10-10
BTS409L1
Pin Symbol Function
1
GND
- Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage, the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5
OUT
O Output to the load
(Load, L)
Data Sheet
2
2013-10-10
BTS409L1
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 4)
Vbb
Supply voltage for short circuit protection Tj Start=-40 ...+150°C
Vbb
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump4) RI3)= 2 , RL= 5.3 , td= 200 ms, IN= low or high
Load current (Short circuit current, see page 5)
IL
Operating temperature range
Tj
Storage temperature range
Tstg
Power dissipation (DC), TC 25 °C
Ptot
Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 2.3 A, ZL = 98 mH, 0 : EAS
Electrostatic discharge capability (ESD)
IN: VESD
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 7
VIN IIN IST
Values 43 34
Unit V V
60 V
self-limited -40 ...+150 -55 ...+150
18
A °C
W
335 mJ
1.0 kV 2.0
-10 ... +16 2.0 5.0
V mA
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on PCB5):
Values min typ max
-- -- 7 -- -- 75
39
Unit K/W
2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3) RI = internal resistance of the load dump test pulse generator 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
Data Sheet
3
2013-10-10
Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
BTS409L1
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.8 A
Tj=25 °C:
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8
Turn-on time
IN to 90% VOUT:
Turn-off time
IN
RL = 12 , Tj =-40...+150°C
to 10% VOUT:
Slew rate on
10 to 30% VOUT, RL = 12 , Tj =-40...+150°C
Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150°C
RON
IL(ISO) IL(GNDhigh)
ton toff dV /dton -dV/dtoff
-- 160 200 m
320 400
1.8 2.3
-- A
-- -- 10 mA
80 200 400 80 200 400
s
0.1 -- 1 V/s
0.1 -- 1 V/s
Operating Parameters
Operating voltage6)
Tj =-40...+150°C: Vbb(on)
5.0 -- 34 V
Undervoltage shutdown
Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V
Undervoltage restart
Tj =-40...+25°C: Vbb(u rst) Tj =+150°C:
-- -- 5.0 V 7.0
Undervoltage restart of charge pump
Vbb(ucp)
see di.