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BTS4140N Dataheets PDF



Part Number BTS4140N
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Smart High-Side Power Switch
Datasheet BTS4140N DatasheetBTS4140N Datasheet (PDF)

BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1Ω Features • Current controlled input • Short circuit protection • Current limitation • Overload protection • Overvoltage protection (including load dump) • Switching inductive loads • Clamp of negative voltage at output with inductive loads • Thermal shutdown with restart • ESD - Protection • Loss of GND and loss of Vbb protection • Very low standby current • Reverse battery protection • Improved electromagnetic compatibility (EMC) Appl.

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BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1Ω Features • Current controlled input • Short circuit protection • Current limitation • Overload protection • Overvoltage protection (including load dump) • Switching inductive loads • Clamp of negative voltage at output with inductive loads • Thermal shutdown with restart • ESD - Protection • Loss of GND and loss of Vbb protection • Very low standby current • Reverse battery protection • Improved electromagnetic compatibility (EMC) Application • All types of resistive, inductive and capacitive loads • Current controlled power switch for 12V, 24V and 42V DC applications • Driver for electromechanical relays • Signal amplifier 2 1 VPS05163 Product Summary Overvoltage protection Operating voltage On-state resistance Vbbin(AZ) Vbb(on) RON SOT-223 4 62 1 V Ω 4.9...60 V 3 General Description N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Page 1 2004-01-27 BTS 4140 N Block Diagram + V bb 2 /4 C o n tro l C irc u it OUT 3 R IN IN 1 R L T e m p e ra tu re Sensor GND Pin 1 2 3 4 Symbol IN Vbb OUT Vbb Function Input, activates the power switch in case of connection to GND Positive power supply voltage Output to the load Positive power supply voltage Page 2 2004-01-27 BTS 4140 N Maximum Ratings Parameter at Tj = 25°C, unless otherwise specified Supply voltage Load current (Short - circuit current, see page 5) Maximum current through the input pin ( DC ) Operating temperature Storage temperature Power dissipation1) TA = 25 °C Inductive load switch-off energy dissipation 2) single pulse Tj = 150 °C, IL = 0.15 A Load dump protection 3) VLoadDump4)= VA + VS RI=2Ω, td=400ms, VIN= low or high IL = 150 mA, Vbb = 13,5 V Vbb = 27 V Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin all other pins ±1 ±5 93.5 127 kV VLoaddump V EAS 1 J Vbb IL I IN Tj T stg Ptot 60 self limited ±15 -40 ...+150 -55 ... +150 1.7 W V A mA °C Symbol Value Unit 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 2not subject to production test, specified by design 3more details see EMC-Characteristics on page 7 4V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Page 3 2004-01-27 BTS 4140 N Electrical Characteristics Parameter at Tj = -40...150 °C, Vbb = 9...42 V unless otherwise specified Thermal Characteristics Thermal resistance @ min. footprint Thermal resistance @ 6 cm 2 cooling area 1) Thermal resistance, junction - soldering point Load Switching Capabilities and Characteristics On-state resistance Pin1 connencted to GND Tj = 25 °C, IL = 150 mA, Vbb = 9...52 V Tj = 150 °C Tj = 25 °C, IL = 50 mA, Vbb = 6 V Nominal load current2) Device on PCB 1) Ta = 85 °C , Tj ≤ 150 °C Turn-on time3) RL = 270 Ω RL = 270 Ω, Vbb = 13.5 V, Tj = 25 °C Turn-off time3) RL = 270 Ω RL = 270 Ω, Vbb = 13.5 V, Tj = 25 °C Slew rate on3) RL = 270 Ω RL = 270 Ω, Tj = 25 °C, Vbb = 13.5 V Slew rate off 3) RL = 270 Ω RL = 270 Ω, Tj = 25 °C, Vbb = 13.5 V VIN = 0V to Vbb 70 to 40% VOUT VIN = Vbb to 0V 10 to 30% VOUT VIN = 0V to Vbb to 10% VOUT VIN = Vbb to 0V to 90% VOUT Symbol min. Rth(JA) Rth(JA) RthJS RON IL(nom) 0.2 - Values typ. 86 60 max. 125 72 17 Unit K/W K/W Ω 1 1.5 2 1.5 3 5 A ton toff dV/dton -dV/dtoff 1.7 84) 4 1.3 64) 4 40 175 4) 140 45 125 4) 100 µs V/µs 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 2Nominal load current is limited by the current limitation ( see page 5 ) 3Timing values only with high input slewrates, otherwise slower. 4not subject to production test, specified by design Page 4 2004-01-27 BTS 4140 N Electrical Characteristics Parameter at Tj = -40...150 °C, Vbb = 9...42 V unless otherwise specified Operating Parameters Operating voltage Standby current Pin1 = open Protection Functions1) Initial peak short circuit current limit (see page 11) Tj = -40 °C, Vbb = 13.5 V, tm = 100 µs Tj = 25 °C Tj = 150 °C Repetitive short circuit current limit Tj = Tjt Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), Ibb = 4 mA Overvoltage protection Ibb = 1 mA Thermal overload trip temperature Thermal hysteresis Tjt ∆Tjt 150 10 °C K Vbbin(AZ) 62 68 IL(SCr) VON(CL) 0.2 60 0.9 0.7 1.2 V IL(SCp) A Vbb(on) Ibb(off) 4.9 2 60 10 V µA Symbol min. Values typ. max. Unit 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Page 5 2004-01-27 BTS 4140 N Electrical Characteristics Parameter at Tj = -40...150 °C, Vbb = 9...42 V unless ot.


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