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BTS432D2 Dataheets PDF



Part Number BTS432D2
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Smart Highside Power Switch
Datasheet BTS432D2 DatasheetBTS432D2 Datasheet (PDF)

PROFET® BTS 432 D2 Smart Highside Power Switch Features • • • • • • • • • • • • Load dump and reverse battery protection1) Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown Diagnostic feedback Open load detection in ON-state CMOS compatible input Electrostatic discharge (ESD) protection Loss of ground and loss of Vbb protection2) Overvoltage protection Undervoltage and overvoltage shutdown with autorestart and hysteresis Product Summary VLoad dump.

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PROFET® BTS 432 D2 Smart Highside Power Switch Features • • • • • • • • • • • • Load dump and reverse battery protection1) Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown Diagnostic feedback Open load detection in ON-state CMOS compatible input Electrostatic discharge (ESD) protection Loss of ground and loss of Vbb protection2) Overvoltage protection Undervoltage and overvoltage shutdown with autorestart and hysteresis Product Summary VLoad dump 80 Vbb-VOUT Avalanche Clamp 58 Vbb (operation) 4.5 ... 42 Vbb (reverse) -32 RON 38 IL(SCp) 44 IL(SCr) 35 IL(ISO) 11 V V V V mΩ A A A Application 5 5 5 • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits 1 Straight leads 1 SMD Standard General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions. R bb + V bb 3 Voltag e source V Logic Voltag e sensor Overvoltag eprotectio n Charge pump Level shifter Rectifie r Curren t limit Gate protectio n OUT 2 IN Limit for unclampe d ind. loads Open load detectio n Short circuit detectio n Temperatur e sensor 5 Load ESD Logic 4 ST GND 1 Signal GND PROF ET ® Load GND 1) 2) No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Infineon Technologies AG Page 1 of 14 1999-03-22 BTS 432 D2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at T j = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω , RL= 1.1 Ω , td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... Symbol Vbb Vs 3) IL Tj Tstg Ptot EAS VESD VIN IIN IST Values 63 66.5 self-limited -40 ...+150 -55 ...+150 125 1.7 2.0 -0.5 ... +6 ±5.0 ±5.0 ≤1 ≤ 75 ≤ tbd Unit V V A °C W J kV V mA Thermal resistance chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on pcb4): K/W 3) 4) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG Page 2 1999-Mar.-22 BTS 432 D2 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: RON Tj=150 °C: Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, V IN = 0, see diagram page 7, Tj =-40...+150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω , Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω , Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω , Tj =-40...+150°C Operating Parameters Operating voltage 5) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: Overvoltage protection6) Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) Tj=-40...+25°C : VIN =0, IST=0, Tj=150°C: Leakage output current (included in Ibb(off)) VIN =0 Operating current (Pin 1)7), VIN =5 V 5) 6) -9 -- 30 55 11 -- 38 70 -1 mΩ A mA µs IL(ISO) IL(GNDhigh) ton toff dV /dton -dV/dtoff 50 10 0.4 1 160 ---- 300 80 2.5 5 V/µs V/µs Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) ∆Vbb(under) Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND 4.5 2.4 ---42 42 -60 63 ----- ---6.5 0.2 --0.2 -67 12 18 6 1.1 42 4.5 4.5 7.5 -52 ---25 60 --- V V V V V V V V V µA µA mA At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Infineon Technologies AG Page 3 1999-Mar.-2.


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