Document
PROFET® BTS 432 E2
Smart Highside Power Switch
Features
• Load dump and reverse battery protection1) VLoad dump • Clamp of negative voltage at output Vbb-VOUT Avalanche • Short-circuit protection Vbb (operation) • Current limitation Vbb (reverse) • Thermal shutdown RON • Diagnostic feedback IL(SCp) • Open load detection in ON-state IL(SCr) • CMOS compatible input IL(ISO) • Electrostatic discharge (ESD) protection • Loss of ground and loss of Vbb protection2) • Overvoltage protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis
Product Summary
80 Clamp 58 4.5 ... 42 -32 38 44 35 11
V V V V mΩ A A A
5
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions.
R bb
+ V bb
3
Voltage source
Overvoltage protection
Current limit
Gate protection
V Logic
Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads
OUT
2
IN
Temperature sensor
5
Load
4
ST
Short circuit detection
GND
® PROFET
Load GND
1
Signal GND
1) 2)
No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads
Semiconductor Group
1
04.96
BTS 432 E2
Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 6...
Symbol Vbb Vs3)
Values 63 66.5 self-limited -40 ...+150 -55 ...+150 125 1.7 2.0 -0.5 ... +6 ±5.0 ±5.0 ≤1 ≤ 75 ≤ tbd
Unit V V A °C W J kV V mA
IL Tj Tstg Ptot EAS VESD VIN IIN IST
Thermal resistance
chip - case: junction - ambient (free air): SMD version, device on pcb4):
RthJC RthJA
K/W
3) 4)
VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air.
Semiconductor Group
2
BTS 432 E2 Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A
Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
Tj=25 °C: RON Tj=150 °C: IL(ISO) IL(GNDhigh)
-9 --
30 55 11 --
38 70 -1
mΩ A mA µs
ton toff
dV /dton -dV/dtoff
50 10 0.4 1
160 ----
300 80 2.5 5
V/µs V/µs
Operating Parameters Tj =-40...+150°C: Operating voltage 5) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Undervoltage restart of charge pump Tj =-40...+150°C: see diagram page 12 Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150°C: Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis ) 6 Tj =-40°C: Overvoltage protection Ibb=40 mA Tj =25...+150°C: Tj=-40...+25°C: Standby current (pin 3) Tj=150°C: VIN=0 Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)7), VIN=5 V
Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp)
∆Vbb(under)
4.5 2.4 ---42 42 -60 63 -----
---6.5 0.2 --0.2 -67 12 18 6 1.1
42 4.5 4.5 7.5 -52 ---25 60 ---
V V V V V V V V V µA µA mA
Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND
5) 6) 7)
At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
3
BTS 432 E2
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specifie.