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BTS432I2 Dataheets PDF



Part Number BTS432I2
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Smart Highside Power Switch
Datasheet BTS432I2 DatasheetBTS432I2 Datasheet (PDF)

PROFET® BTS 432 I2 Smart Highside Power Switch Features • • • • • • • • • • • • Product Summary Clamp 80 58 4.5 ... 42 -32 38 42 33 11 V V V V mΩ A A A Load dump and reverse battery protection1) VLoad dump Clamp of negative voltage at output Vbb-VOUT Avalanche Short-circuit protection Vbb (operation) Current limitation Vbb (reverse) Thermal shutdown RON Diagnostic feedback Open load detection in OFF-state IL(SCp) CMOS compatible input IL(SCr) Electrostatic discharge (ESD) protection IL(ISO) L.

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PROFET® BTS 432 I2 Smart Highside Power Switch Features • • • • • • • • • • • • Product Summary Clamp 80 58 4.5 ... 42 -32 38 42 33 11 V V V V mΩ A A A Load dump and reverse battery protection1) VLoad dump Clamp of negative voltage at output Vbb-VOUT Avalanche Short-circuit protection Vbb (operation) Current limitation Vbb (reverse) Thermal shutdown RON Diagnostic feedback Open load detection in OFF-state IL(SCp) CMOS compatible input IL(SCr) Electrostatic discharge (ESD) protection IL(ISO) Loss of ground and loss of Vbb protection2) Overvoltage protection Undervoltage and overvoltage shutdown with auto-restart and hysteresis 5 1 5 Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits SMD Standard General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions. R bb + Vbb 3 Voltage source V Logic Voltage sensor Overvoltage protection Current limit Gate protection OUT Charge pump Level shifter Rectifier Limit for unclamped ind. loads Open load 2 IN Temperature sensor 5 Load ESD Logic detection 4 ST Short circuit detection GND ® PROFET Load GND 1 Signal GND 1) 2) No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Infineon Technologies AG Page 1 of 15 1999-02-19 BTS 432 I2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at T j = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω , RL= 1.1 Ω , td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... Symbol Vbb Vs 3) IL Tj Tstg Ptot EAS VESD VIN IIN IST Values 63 66.5 self-limited -40 ...+150 -55 ...+150 125 1.7 2.0 -0.5 ... +6 ±5.0 ±5.0 ≤1 ≤ 75 ≤ tbd Unit V V A °C W J kV V mA Thermal resistance chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on pcb4): K/W 3) 4) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG Page 2 1999-02-19 BTS 432 I2 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: RON Tj=150 °C: Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, V IN = 0, see diagram page 7, Tj =-40...+150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω , Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω , Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω , Tj =-40...+150°C Operating Parameters Operating voltage 5) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: Overvoltage protection6) Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) VIN =0, IST=0, Tj=-40...+25°C : Tj=150°C: Operating current (Pin 1)7), VIN =5 V 5) 6) 7) -9 -- 30 55 11 -- 38 70 -1 mΩ A mA µs IL(ISO) IL(GNDhigh) ton toff dV /dton -dV/dtoff 50 10 0.4 1 160 ---- 300 80 2.5 5 V/µs V/µs Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) ∆Vbb(under) Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) Ibb(off) 4.5 2.4 ---42 42 -60 63 --- ---6.5 0.2 --0.2 -67 40 50 1.1 42 4.5 4.5 7.5 -52 ---- V V V V V V V V V µA 70 110 -mA IGND -- At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST , if IST > 0, add IIN, if VIN>5.5 V Infineon Technologies AG Page 3 1999-02-19 BTS 432 I2 Protection Functions Initial peak shor.


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