Document
PROFET® Data Sheet BTS555
Smart Highside High Current Power Switch
Reversave
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output
Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio
Vbb(AZ) VON(CL) Vbb(on)
RON IL(ISO) IL(SCp) IL : IIS
62 V 44 V 5.0 ... 34 V
2.5 mΩ 165 A 520 A 30 000
• Fast deenergizing of inductive loads 1) • Low ohmic inverse current operation • Diagnostic feedback with load current sense • Open load detection via current sense
PG-TO218-5-146
• Loss of Vbb protection2) • Electrostatic discharge (ESD) protection
• Green Product (RoHS compliant)
• AEC qualified
5 1 Straight leads
Application
• Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads • Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads • Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
Voltage source
Voltage sensor
2 IN
ESD
I IN
Logic
VIN V IS
Logic GND
I IS
IS
4
RIS
Overvoltage protection
Current limit
Gate protection
R bb
Charge pump Level shifter
Rectifier
Limit for unclamped ind. loads
Output Voltage detection
Current Sense
3 & Tab
+ Vbb
OUT 1, 5
IL
Load
Temperature sensor
PROFET
Load GND
1 ) With additional external diode. 2) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
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2010-June-01
Pin 1 2 3
4 5
Symbol OUT IN Vbb
IS OUT
Data Sheet BTS555
Function
Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3)
Input, activates the power switch in case of short to ground
Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin4).
Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7)
Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Supply voltage (see page 4 and 5)
Supply voltage for full short circuit protection, (EAS limitation see diagram on page 10) Tj,start=-40°C…+150°C: Load current (short circuit current, see page 5)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI5) = 2 Ω, RL = 0.1 Ω, td = 200 ms, IN, IS = open or grounded
Vbb Vbb
IL
VLoad dump6)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const., IL = 20 A, ZL = 15 mH, 0 Ω, see diagram on page 10
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8 and 9
Tj Tstg Ptot
EAS
VESD
IIN IIS
Values Unit 40 V 34 V
self-limited A
80 V
-40 ...+150 -55 ...+150
360
°C W
3J 4.0 kV
+15 , -250 mA +15 , -250
3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4) Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the tab.
5) RI = internal resistance of the load dump test pulse generator. 6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Infineon Technologies AG
2
2010-June-01
Data Sheet BTS555
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC7) junction - ambient (free air): RthJA
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,5, see measurement
circuit page 7)
IL = 30 A, Tj = 25 °C: RON
VIN = 0, IL = 30 A, Tj = 150 °C:
IL = 120 A, Tj = 150 °C: Vbb = 6 V8), IL = 20 A, Tj = 150 °C:
Nominal load current9) (Tab to pins 1,5)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10)
Maximum load current in resistive range
(Tab to pins 1,5)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 13
VON = 1.8 V, Tc = 150 °C:
Turn-on time11)
IIN to 90% VOUT:
Turn-off time
IIN to 10% VOUT:
RL = 1 Ω , T.