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BTS555 Dataheets PDF



Part Number BTS555
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Smart Highside High Current Power Switch
Datasheet BTS555 DatasheetBTS555 Datasheet (PDF)

PROFET® Data Sheet BTS555 Smart Highside High Current Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET Features • Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Vb.

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PROFET® Data Sheet BTS555 Smart Highside High Current Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET Features • Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Vbb(AZ) VON(CL) Vbb(on) RON IL(ISO) IL(SCp) IL : IIS 62 V 44 V 5.0 ... 34 V 2.5 mΩ 165 A 520 A 30 000 • Fast deenergizing of inductive loads 1) • Low ohmic inverse current operation • Diagnostic feedback with load current sense • Open load detection via current sense PG-TO218-5-146 • Loss of Vbb protection2) • Electrostatic discharge (ESD) protection • Green Product (RoHS compliant) • AEC qualified 5 1 Straight leads Application • Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads • Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. Voltage source Voltage sensor 2 IN ESD I IN Logic VIN V IS Logic GND I IS IS 4 RIS Overvoltage protection Current limit Gate protection R bb Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection Current Sense 3 & Tab + Vbb OUT 1, 5 IL Load Temperature sensor PROFET Load GND 1 ) With additional external diode. 2) Additional external diode required for energized inductive loads (see page 9). Infineon Technologies AG 1 of 16 2010-June-01 Pin 1 2 3 4 5 Symbol OUT IN Vbb IS OUT Data Sheet BTS555 Function Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin4). Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3) Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Supply voltage (see page 4 and 5) Supply voltage for full short circuit protection, (EAS limitation see diagram on page 10) Tj,start=-40°C…+150°C: Load current (short circuit current, see page 5) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI5) = 2 Ω, RL = 0.1 Ω, td = 200 ms, IN, IS = open or grounded Vbb Vbb IL VLoad dump6) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const., IL = 20 A, ZL = 15 mH, 0 Ω, see diagram on page 10 Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 8 and 9 Tj Tstg Ptot EAS VESD IIN IIS Values Unit 40 V 34 V self-limited A 80 V -40 ...+150 -55 ...+150 360 °C W 3J 4.0 kV +15 , -250 mA +15 , -250 3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 4) Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the tab. 5) RI = internal resistance of the load dump test pulse generator. 6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Infineon Technologies AG 2 2010-June-01 Data Sheet BTS555 Thermal Characteristics Parameter and Conditions Symbol Thermal resistance chip - case: RthJC7) junction - ambient (free air): RthJA Electrical Characteristics Parameter and Conditions at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Symbol Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,5, see measurement circuit page 7) IL = 30 A, Tj = 25 °C: RON VIN = 0, IL = 30 A, Tj = 150 °C: IL = 120 A, Tj = 150 °C: Vbb = 6 V8), IL = 20 A, Tj = 150 °C: Nominal load current9) (Tab to pins 1,5) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10) Maximum load current in resistive range (Tab to pins 1,5) VON = 1.8 V, Tc = 25 °C: see diagram on page 13 VON = 1.8 V, Tc = 150 °C: Turn-on time11) IIN to 90% VOUT: Turn-off time IIN to 10% VOUT: RL = 1 Ω , T.


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