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BTS640S2S Dataheets PDF



Part Number BTS640S2S
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Smart Sense High-Side Power Switch
Datasheet BTS640S2S DatasheetBTS640S2S Datasheet (PDF)

PROFET® BTS 640 S2 Smart Sense High-Side Power Switch Features • Short circuit protection • Current limitation • Proportional load current sense • CMOS compatible input Package • Open drain diagnostic output • Fast demagnetization of inductive loads TO220-7-11 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Overload protection • Thermal shutdown 1 Standard (staggered) • Overvoltage protection including load dump (with external GND-resistor) • Reverse battery protecti.

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PROFET® BTS 640 S2 Smart Sense High-Side Power Switch Features • Short circuit protection • Current limitation • Proportional load current sense • CMOS compatible input Package • Open drain diagnostic output • Fast demagnetization of inductive loads TO220-7-11 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Overload protection • Thermal shutdown 1 Standard (staggered) • Overvoltage protection including load dump (with external GND-resistor) • Reverse battery protection (with external GND-resistor) • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Product Summary Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(on) RON IL(ISO) IL(SCr) 5.0 ... 34 V 30 mΩ 12.6 A 24 A TO220-7-12 TO263-7-2 1 SMD 1 Straight • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays, fuses and discrete circuits Application General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Block Diagram 4 + V bb Voltage source V Logic Voltage sensor Overvoltage protection Current limit Gate protection OUT 6, 7 IL Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection Temperature sensor 3 1 IN Current Sense Load ST ESD Logic R O GND 5 R IS I IS IS Signal GND GND  PROFET Load GND 2 Semiconductor Group Page 1 of 15 2003-Oct-01 BTS 640 S2 Pin 1 2 3 4 5 6&7 Symbol ST GND IN Vbb IS OUT (Load, L) Function Diagnostic feedback: open drain, invers to input level Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Sense current output, proportional to the load current, zero in the case of current limitation of load current Output, protected high-side power output to the load. Both output pins have to be connected in parallel for operation according this spec (e.g. kILIS). Design the wiring for the max. short circuit current Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Symbol Vbb Vbb VLoad dump3) IL Tj Tstg Ptot Values 43 34 60 self-limited -40 ...+150 -55 ...+150 85 0,41 3,5 1.0 4.0 8.0 -10 ... +16 ±2.0 ±5.0 ±14 Unit V V V A °C W J kV Load dump protection1) VLoadDump = VA + Vs, VA = 13.5V RI2)= 2 Ω, RL= 1 Ω, td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 12.6 A, ZL = 4,2 mH, 0 Ω: EAS IL = 4 A, ZL = 330 mH, 0 Ω: EAS Electrostatic discharge capability (ESD) IN: VESD (Human Body Model) ST, IS: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 8 VIN IIN IST IIS V mA 1) 2) 3) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω resistor in the GND connection is recommended). RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839 Semiconductor Group Page 2 2003-Oct-01 BTS 640 S2 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB4): Values typ max -- 1.47 -75 33 -Unit K/W Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 6&7) IL = 5 A Tj=25 °C: RON Tj=150 °C: VON(NL) IL(ISO) IL(NOM) IL(GNDhigh) ton toff dV /dton -dV/dtoff -- 27 54 50 12.6 4.5 -70 80 --- 30 60 ---8 150 200 1 1 mΩ Output voltage drop limitation at small load currents (pin 4 to 6&7), see page 14 IL = 0.5 A VON = 0.5 V, TC = 85 °C Tj =-40...+150°C: -11.4 4.0 -25 25 0.1 0.1 mV A A mA µs V/µs V/µs Nominal load current, ISO Norm (pin 4 to 6&7) Nominal load current, device on PCB4) TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V, Output current (pin 6&7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 9; not subject to production test, specified by design Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% V.


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