Document
PROFET® BTS 640 S2
Smart Sense High-Side Power Switch
Features
• Short circuit protection • Current limitation • Proportional load current sense • CMOS compatible input Package • Open drain diagnostic output • Fast demagnetization of inductive loads TO220-7-11 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Overload protection • Thermal shutdown 1 Standard (staggered) • Overvoltage protection including load dump (with external GND-resistor) • Reverse battery protection (with external GND-resistor) • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection
Product Summary Operating voltage On-state resistance Load current (ISO) Current limitation
Vbb(on) RON IL(ISO) IL(SCr)
5.0 ... 34 V 30 mΩ 12.6 A 24 A
TO220-7-12
TO263-7-2
1 SMD
1 Straight
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays, fuses and discrete circuits
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Block Diagram
4
+ V bb
Voltage source V Logic Voltage sensor
Overvoltage protection
Current limit
Gate protection
OUT
6, 7
IL
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads Output Voltage detection Temperature sensor
3 1
IN
Current Sense Load
ST
ESD
Logic
R
O GND
5
R
IS
I IS
IS Signal GND GND
PROFET
Load GND
2
Semiconductor Group
Page 1 of 15
2003-Oct-01
BTS 640 S2
Pin 1 2 3 4 5 6&7 Symbol ST GND IN Vbb IS OUT (Load, L) Function Diagnostic feedback: open drain, invers to input level Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Sense current output, proportional to the load current, zero in the case of current limitation of load current Output, protected high-side power output to the load. Both output pins have to be connected in parallel for operation according this spec (e.g. kILIS). Design the wiring for the max. short circuit current
Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C
Symbol Vbb Vbb VLoad dump3) IL Tj Tstg Ptot
Values 43 34 60 self-limited -40 ...+150 -55 ...+150 85 0,41 3,5 1.0 4.0 8.0 -10 ... +16 ±2.0 ±5.0 ±14
Unit V V V A °C W J kV
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5V
RI2)= 2 Ω, RL= 1 Ω, td= 200 ms, IN= low or high
Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
IL = 12.6 A, ZL = 4,2 mH, 0 Ω: EAS IL = 4 A, ZL = 330 mH, 0 Ω: EAS Electrostatic discharge capability (ESD) IN: VESD (Human Body Model) ST, IS: out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Current through current sense pin (DC)
see internal circuit diagrams page 8
VIN IIN IST IIS
V mA
1) 2) 3)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω resistor in the GND connection is recommended). RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839
Semiconductor Group
Page 2
2003-Oct-01
BTS 640 S2 Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB4): Values typ max -- 1.47 -75 33 -Unit K/W
Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 6&7)
IL = 5 A
Tj=25 °C: RON Tj=150 °C: VON(NL) IL(ISO) IL(NOM) IL(GNDhigh) ton toff dV /dton -dV/dtoff
--
27 54 50 12.6 4.5 -70 80 ---
30 60 ---8 150 200 1 1
mΩ
Output voltage drop limitation at small load currents (pin 4 to 6&7), see page 14
IL = 0.5 A VON = 0.5 V, TC = 85 °C Tj =-40...+150°C:
-11.4 4.0 -25 25 0.1 0.1
mV A A mA µs V/µs V/µs
Nominal load current, ISO Norm (pin 4 to 6&7) Nominal load current, device on PCB4)
TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V,
Output current (pin 6&7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page
9; not subject to production test, specified by design Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% V.