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BTS716G Dataheets PDF



Part Number BTS716G
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Smart High-Side Power Switch
Datasheet BTS716G DatasheetBTS716G Datasheet (PDF)

BTS 716G Smart High-Side Power Switch Four Channels: 4 x 140mΩ Status Feedback Product Summary Operating Voltage Vbb Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) 5.5 ...40V four parallel 35mΩ 5.3A 6.5A Package P-DSO-20 one 140mΩ 2.6A 6.5A General Description • • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and  diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing e.

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BTS 716G Smart High-Side Power Switch Four Channels: 4 x 140mΩ Status Feedback Product Summary Operating Voltage Vbb Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) 5.5 ...40V four parallel 35mΩ 5.3A 6.5A Package P-DSO-20 one 140mΩ 2.6A 6.5A General Description • • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and  diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions Applications • • • • µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Functions • • • • • • • Very low standby current CMOS compatible input Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range Logic ground independent from load ground Protection Functions • • • • • • • • Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD) Block Diagram Vbb IN1 ST1/2 IN2 Logic Channel 1 Channel 2 Load 1 Load 2 Diagnostic Function • • • Diagnostic feedback with open drain output Open load detection in OFF-state Feedback of thermal shutdown in ON-state IN3 ST3/4 IN4 Logic Channel 3 Channel 4 Load 3 GND Load 4 Infineon Technologies AG 1 of 14 2003-Oct-01 BTS 716G Functional diagram overvoltage protection internal voltage supply IN1 logic gate control + charge pump current limit VBB clamp for inductive load OUT1 ESD temperature sensor Open load detection reverse battery protection LOAD . ST1/2 channel 1 IN2 control and protection circuit of channel 2 OUT2 GND1/2 IN3 control and protection circuit of channel 3 OUT3 ST3/4 IN4 control and protection circuit of channel 4 OUT4 GND3/4 Infineon Technologies AG 2 of 14 2003-Oct-01 BTS 716G Pin Definitions and Functions Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 Symbol Function Vbb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance IN1 Input 1,2,3,4 activates channel 1,2,3,4 in case of logic high signal IN2 IN3 IN4 OUT1 Output 1,2,3,4 protected high-side power output of channel 1,2,3,4. Design the wiring for the OUT2 max. short circuit current OUT3 OUT4 ST1/2 Diagnostic feedback 1/2,3/4 of channel 1,2,3,4 ST3/4 open drain, low on failure GND1/2 Ground of chip 1 (channel 1,2) GND3/4 Ground of chip 2 (channel 3,4) Pin configuration (top view) Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 • 20 19 18 17 16 15 14 13 12 11 Vbb Vbb OUT1 OUT2 Vbb Vbb OUT3 OUT4 Vbb Vbb Infineon Technologies AG 3 of 14 2003-Oct-01 BTS 716G Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 6) Supply voltage for full short circuit protection Tj,start = -40 ...+150°C Load current (Short-circuit current, see page 6) Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2) = 2 Ω, td = 400 ms; IN = low or high, each channel loaded with RL = 13.5 Ω, Operating temperature range Storage temperature range Power dissipation (DC)4) Ta = 25°C: Ta = 85°C: (all channels active) Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C4), see diagrams on page 10 IL = 2.3 A, EAS = 76 mJ, 0 Ω one channel: IL = 3.3 A, EAS = 182 mJ, 0 Ω two parallel channels: IL = 4.7 A, EAS = 460 mJ, 0 Ω four parallel channels: Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF Symbol Vbb Vbb IL VLoad dump3) Tj Tstg Ptot Values 43 36 self-limited 60 -40 ...+150 -55 ...+150 3.6 1.9 Unit V V A V °C W ZL 21 25 30 1.0 4.0 8.0 -10 ... +16 ±0.3 ±5.0 ±5.0 mH VESD kV Input voltage (DC) see internal circuit diagram page 9 Current through input pin (DC) Pulsed current through input pin5) Current through status pin (DC) VIN IIN IIN IST V mA 1) 2) 3) 4) 5) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 only for testing Infineon Technologies AG 4 of 14 2003-Oct-01 BTS 716G Therm.


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