Document
BTS 716G
Smart High-Side Power Switch Four Channels: 4 x 140mΩ Status Feedback
Product Summary
Operating Voltage Vbb Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) 5.5 ...40V four parallel 35mΩ 5.3A 6.5A
Package
P-DSO-20
one 140mΩ 2.6A 6.5A
General Description
• • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions
Applications
• • • • µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• • • • • • • Very low standby current CMOS compatible input Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range Logic ground independent from load ground
Protection Functions
• • • • • • • • Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN1 ST1/2 IN2
Logic Channel 1 Channel 2
Load 1 Load 2
Diagnostic Function
• • • Diagnostic feedback with open drain output Open load detection in OFF-state Feedback of thermal shutdown in ON-state
IN3 ST3/4 IN4
Logic Channel 3 Channel 4
Load 3
GND
Load 4
Infineon Technologies AG
1 of 14
2003-Oct-01
BTS 716G
Functional diagram
overvoltage protection
internal voltage supply
IN1
logic
gate control + charge pump
current limit
VBB
clamp for inductive load
OUT1
ESD
temperature sensor Open load detection
reverse battery protection
LOAD
.
ST1/2
channel 1
IN2
control and protection circuit of channel 2
OUT2
GND1/2
IN3
control and protection circuit of channel 3
OUT3
ST3/4
IN4
control and protection circuit of channel 4
OUT4
GND3/4
Infineon Technologies AG
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2003-Oct-01
BTS 716G
Pin Definitions and Functions
Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 Symbol Function Vbb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance IN1 Input 1,2,3,4 activates channel 1,2,3,4 in case of logic high signal IN2 IN3 IN4 OUT1 Output 1,2,3,4 protected high-side power output of channel 1,2,3,4. Design the wiring for the OUT2 max. short circuit current OUT3 OUT4 ST1/2 Diagnostic feedback 1/2,3/4 of channel 1,2,3,4 ST3/4 open drain, low on failure GND1/2 Ground of chip 1 (channel 1,2) GND3/4 Ground of chip 2 (channel 3,4)
Pin configuration
(top view)
Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb
1 2 3 4 5 6 7 8 9 10
•
20 19 18 17 16 15 14 13 12 11
Vbb Vbb OUT1 OUT2 Vbb Vbb OUT3 OUT4 Vbb Vbb
Infineon Technologies AG
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2003-Oct-01
BTS 716G Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter Supply voltage (overvoltage protection see page 6) Supply voltage for full short circuit protection Tj,start = -40 ...+150°C Load current (Short-circuit current, see page 6) Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2) = 2 Ω, td = 400 ms; IN = low or high, each channel loaded with RL = 13.5 Ω, Operating temperature range Storage temperature range Power dissipation (DC)4) Ta = 25°C: Ta = 85°C: (all channels active) Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C4), see diagrams on page 10 IL = 2.3 A, EAS = 76 mJ, 0 Ω one channel: IL = 3.3 A, EAS = 182 mJ, 0 Ω two parallel channels: IL = 4.7 A, EAS = 460 mJ, 0 Ω four parallel channels: Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF
Symbol Vbb Vbb IL VLoad dump3) Tj Tstg Ptot
Values 43 36 self-limited 60 -40 ...+150 -55 ...+150 3.6 1.9
Unit V V A V °C W
ZL
21 25 30 1.0 4.0 8.0 -10 ... +16 ±0.3 ±5.0 ±5.0
mH
VESD
kV
Input voltage (DC) see internal circuit diagram page 9 Current through input pin (DC) Pulsed current through input pin5) Current through status pin (DC)
VIN IIN IIN IST
V mA
1) 2) 3) 4) 5)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 only for testing
Infineon Technologies AG
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2003-Oct-01
BTS 716G Therm.