Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
HITFET® BTS 941
Smart Lowside Power Switch
Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • O...
Description
HITFET® BTS 941
Smart Lowside Power Switch
Features Logic Level Input Input Protection (ESD) Thermal Shutdown Overload protection Short circuit protection Overvoltage protection
Current
Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy
VDS RDS(on) ID(lim) ID(ISO) EAS
60 28 6 12
V mΩ A A
4000 mJ
limitation
Maximum current adjustable with external resistor Current sense Status feedback with external input resistor Analog driving possible
Application
All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V and 24 V DC applications Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions.
V bb
+
LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M
2
3
1
IN
4
CC Overtemperature protection
ESD R CC
Overload protection
Short circuit circuit Short protection protection Source 5
HITFET
®
Semiconductor Group
Page 1
14.07.1998
BTS 941
Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 Ω without RCC Continuous input current -0.2V ≤ VIN ≤ 10V
1)
Symbol
Value 60 15 50
Unit V
VDS VDS(SC)
IIN
no limit | IIN | ≤ 2 - 40 ... +150 - 55 ... +150 149 4000 3000
...
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