BTS949

HITFET®BTS 949 Smart Lowside Power Switch Features Logic Level Input Input Protection (ESD) Thermal Shutdown Overload protection Short circuit protection Overvoltage protection Current limitation Maximum current adjustable with external resistor Current sense Status feedback with external input resistor Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS R DS(on) I D(lim) I D(ISO) EAS 60 18 9.5 19 V mΩ A A 6000 mJ Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V and 24 V DC applications Replaces electromechanical relays and discrete circuits N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions. V bb General Description + LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M 2 3 1 IN 4 CC Overtemperature protection ESD R CC Overload protection Short circuit circuit Short protection protection Source 5 HITFET ® Semiconductor Group Page 1 02.12.1998 BTS 949 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 Ω without RCC Continuous input current -0.2V ≤ V IN ≤ 10V 1) Symbol Value 60 15 50 Unit V VDS VDS(SC) I IN no limit | IIN | ≤ 2 mA VIN < -0.2V or VIN > 10V Operating ...