BU1706AB

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 1.5 0.25 MAX. 1750 850 5 8 100 1.0 0.6 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 1.5 A; IB = 0.3 A ICM = 1.5 A; IB(on) = 0.3 A PINNING - SOT404 PIN 1 2 3 mb base collector emitter collector DESCRIPTION PIN CONFIGURATION mb SYMBOL c b 2 1 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1750 850 5 8 3 5 100 4 100 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20ms period Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb ...