Document
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.4 MAX. 1500 700 8 15 45 1.0 0.6 UNIT V V A A W V A µs
Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.12 A ICsat = 4.5 A; IB(end) = 1.1 A
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 700 8 15 4 6 100 5 45 150 150 UNIT V V A A A A mA A W ˚C ˚C
average over any 20 ms period Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W
1 Turn-off current.
November 1997
1
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 4.5 A; IB = 1.12 A IC = 4.5 A; IB = 1.7 A IC = 100 mA;VCE = 5 V IC = 4.5 A;VCE = 1 V
MIN. 7.5 700 4
TYP. 13.5 13 5.5
MAX. 1.0 2.0 1.0 1.0 1.1 7.0
UNIT mA mA mA V V V V
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Switching times (38 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH; -VBB = 4 V; (-dIB/dt = 0.6 A/µs) ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH; -VBB = 4 V; (-dIB/dt = 0.6 A/µs) 4.7 0.25 5.7 0.35 µs µs TYP. 80 MAX. UNIT pF µs µs
ts tf
5.0 0.4
6.0 0.6
2 Measured with half sine-wave voltage (curve tracer).
November 1997
2
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
ICsat
+ 50v 100-200R
IC
90 %
Horizontal
tf
10 %
Oscilloscope
IB
t
ts IBend
Vertical 100R 6V 30-60 Hz 1R
t
- IBM
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal adjust for ICsat
1mH
250 200
100
IBend
LB
D.U.T. 12nF
BY228
0 VCE / V
-VBB
min VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
Fig.5. Switching times test circuit.
TRANSISTOR IC DIODE
ICsat
100
h FE
t
5V
IB
IBend
10
t 20us 26us 64us VCE
Tj = 25 C Tj = 125 C
1V
1 0.01
t
0.1 IC / A
1
10
Fig.3. Switching times waveforms.
Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE
November 1997
3
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4
VBESAT / V
Tj = 25 C Tj = 125 C
10
VCESAT / V
Tj = 25 C Tj = 125 C
6A 4.5A
IC/IB= 3 4 5
1 3A IC=2A 0.1
0.1
1 IC / A
10
0.1
1 IB / A
10
Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB
VCESAT / V IC/IB= 5 4 3
Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
Eoff / uJ
1 0.9 0.8 0.7 0.6 0.5
1000
IC = 4.5A 3.5A
100
Tj = 25 C Tj = 125 C
0.4 0.3 0.2 0.1 0
10
0.1 1 IC / A 10
0.1
1 IB / A
10
Fig.8. Typical co.