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BU2508AX Dataheets PDF



Part Number BU2508AX
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU2508AX DatasheetBU2508AX Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VC.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.4 MAX. 1500 700 8 15 45 1.0 0.6 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.12 A ICsat = 4.5 A; IB(end) = 1.1 A PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 700 8 15 4 6 100 5 45 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W 1 Turn-off current. November 1997 1 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 4.5 A; IB = 1.12 A IC = 4.5 A; IB = 1.7 A IC = 100 mA;VCE = 5 V IC = 4.5 A;VCE = 1 V MIN. 7.5 700 4 TYP. 13.5 13 5.5 MAX. 1.0 2.0 1.0 1.0 1.1 7.0 UNIT mA mA mA V V V V Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Switching times (38 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH; -VBB = 4 V; (-dIB/dt = 0.6 A/µs) ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH; -VBB = 4 V; (-dIB/dt = 0.6 A/µs) 4.7 0.25 5.7 0.35 µs µs TYP. 80 MAX. UNIT pF µs µs ts tf 5.0 0.4 6.0 0.6 2 Measured with half sine-wave voltage (curve tracer). November 1997 2 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX ICsat + 50v 100-200R IC 90 % Horizontal tf 10 % Oscilloscope IB t ts IBend Vertical 100R 6V 30-60 Hz 1R t - IBM Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions. IC / mA + 150 v nominal adjust for ICsat 1mH 250 200 100 IBend LB D.U.T. 12nF BY228 0 VCE / V -VBB min VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit. TRANSISTOR IC DIODE ICsat 100 h FE t 5V IB IBend 10 t 20us 26us 64us VCE Tj = 25 C Tj = 125 C 1V 1 0.01 t 0.1 IC / A 1 10 Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE November 1997 3 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 VBESAT / V Tj = 25 C Tj = 125 C 10 VCESAT / V Tj = 25 C Tj = 125 C 6A 4.5A IC/IB= 3 4 5 1 3A IC=2A 0.1 0.1 1 IC / A 10 0.1 1 IB / A 10 Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB VCESAT / V IC/IB= 5 4 3 Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC Eoff / uJ 1 0.9 0.8 0.7 0.6 0.5 1000 IC = 4.5A 3.5A 100 Tj = 25 C Tj = 125 C 0.4 0.3 0.2 0.1 0 10 0.1 1 IC / A 10 0.1 1 IB / A 10 Fig.8. Typical co.


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