Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515AX
GENERAL DESCRIPTION
New gene...
Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BU2515AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching
npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.2 MAX. 1500 800 9 20 45 5.0 0.4 UNIT V V A A W V A µs
Ths ≤ 25 ˚C IC = 4.5 A; IB = 0.9 A f = 56 kHz ICsat = 4.5 A; f = 56 kHz
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 9 20 5 7.5 125 6 45 150 150 UNIT V V A A A A mA A W ˚C ˚C
average over any 20 ms period Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs...