Document
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 TYP. 8 0.2 MAX. 1500 800 12 30 125 5.0 0.35 UNIT V V A A W V A µs
Tmb ≤ 25 ˚C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A; IB(end) = 1.1 A
PINNING - SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 125 150 150 UNIT V V A A A A mA A W ˚C ˚C
average over any 20 ms period Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 8.0 A; IB = 1.6 A IC = 8.0 A; IB = 1.6 A IC = 100 mA; VCE = 5 V IC = 8 A; VCE = 5 V
MIN. 7.5 800 5
TYP. 13.5 13 7
MAX. 1.0 2.0 1.0 5.0 1.3 9.5
UNIT mA mA mA V V V V
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (32 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 8.0 A; LC = 260 µH; Cfb = 13 nF; IB(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V; (-dIB/dt = 1.6 A/µs) TYP. 145 MAX. UNIT pF
3.0 0.2
4.0 0.35
µs µs
IC / mA
+ 50v 100-200R
250
Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R
200
100
0 VCE / V
min VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AW
TRANSISTOR IC DIODE
ICsat
100
hFE
BU2525A
Tj = 25 C
t
5V
Tj = 125 C
IB
IBend
10
t 10us 13us 32us VCE
1V
1 0.1
t
1 IC / A
10
100
Fig.3. Switching times waveforms.
Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE
VBESAT / V
Tj = 25 C Tj = 125 C
ICsat 90 % IC
1.2 1.1 1 0.9
BU2525A
10 % tf ts IB IBend
0.8
t
0.7 0.6
IC/IB= 3 4 5 0.1 1 IC / A 10
t
0.5 0.4
- IBM
Fig.4. Switching times definitions.
Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB
VCESAT / V IC/IB = 5 4 3 BU2525A
+ 150 v nominal adjust for ICsat
1 0.9 0.8
Lc
0.7 0.6 0.5
Tj = 25 C
0.4
Tj = 125 C
IBend
LB
T.U.T. Cfb
0.3 0.2 0.1 0 0.1 1 IC / A 10 100
-VBB
Fig.5. Switching times test circuit (BU2525A).
Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AW
1.2 1.1 1 0.9
VBESAT / V
Tj = 25 C Tj = 125 C
BU2525A
IC= 0.8 0.7 0.6 0 1 2 IB / A 3 8A 6A 5A 4A 4
12 11 10 9 8 7 6 5 4 3 2 1 0
ts, tf / us 32 kHz
BU2525A
ts
IC = 8A 7A 0.1 1 IB / A tf 10
Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
VCESAT / V BU2525A
Tj = 25 C Tj = 125 C
Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
PD% Normalised Power Derating
10
120 110 100 90 80 70 60 50 40 30 20 10 0
8A
1
6A
5A
IC = 4 A 0.1 0.1 1 IB / A 10
0
20
40
60
80 100 Tmb / C
120
140
Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
Eoff / uJ IC = 8 A BU2525A
Fig.13. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb)
Zth / (K/W) BU2525A
1000
10
1
7A 100
0.5 0.1 0.2 0.1 0.05 0..