DatasheetsPDF.com

BU2525AW Dataheets PDF



Part Number BU2525AW
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU2525AW DatasheetBU2525AW Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector curre.

  BU2525AW   BU2525AW


Document
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 TYP. 8 0.2 MAX. 1500 800 12 30 125 5.0 0.35 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A; IB(end) = 1.1 A PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 125 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W 1 Turn-off current. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 8.0 A; IB = 1.6 A IC = 8.0 A; IB = 1.6 A IC = 100 mA; VCE = 5 V IC = 8 A; VCE = 5 V MIN. 7.5 800 5 TYP. 13.5 13 7 MAX. 1.0 2.0 1.0 5.0 1.3 9.5 UNIT mA mA mA V V V V Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (32 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 8.0 A; LC = 260 µH; Cfb = 13 nF; IB(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V; (-dIB/dt = 1.6 A/µs) TYP. 145 MAX. UNIT pF 3.0 0.2 4.0 0.35 µs µs IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R 200 100 0 VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW TRANSISTOR IC DIODE ICsat 100 hFE BU2525A Tj = 25 C t 5V Tj = 125 C IB IBend 10 t 10us 13us 32us VCE 1V 1 0.1 t 1 IC / A 10 100 Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE VBESAT / V Tj = 25 C Tj = 125 C ICsat 90 % IC 1.2 1.1 1 0.9 BU2525A 10 % tf ts IB IBend 0.8 t 0.7 0.6 IC/IB= 3 4 5 0.1 1 IC / A 10 t 0.5 0.4 - IBM Fig.4. Switching times definitions. Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB VCESAT / V IC/IB = 5 4 3 BU2525A + 150 v nominal adjust for ICsat 1 0.9 0.8 Lc 0.7 0.6 0.5 Tj = 25 C 0.4 Tj = 125 C IBend LB T.U.T. Cfb 0.3 0.2 0.1 0 0.1 1 IC / A 10 100 -VBB Fig.5. Switching times test circuit (BU2525A). Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB September 1997 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW 1.2 1.1 1 0.9 VBESAT / V Tj = 25 C Tj = 125 C BU2525A IC= 0.8 0.7 0.6 0 1 2 IB / A 3 8A 6A 5A 4A 4 12 11 10 9 8 7 6 5 4 3 2 1 0 ts, tf / us 32 kHz BU2525A ts IC = 8A 7A 0.1 1 IB / A tf 10 Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC VCESAT / V BU2525A Tj = 25 C Tj = 125 C Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz PD% Normalised Power Derating 10 120 110 100 90 80 70 60 50 40 30 20 10 0 8A 1 6A 5A IC = 4 A 0.1 0.1 1 IB / A 10 0 20 40 60 80 100 Tmb / C 120 140 Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC Eoff / uJ IC = 8 A BU2525A Fig.13. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) Zth / (K/W) BU2525A 1000 10 1 7A 100 0.5 0.1 0.2 0.1 0.05 0..


BU2525AF BU2525AW BU2525AX


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)