Document
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 9 3.5 MAX. 1500 800 16 40 125 5.0 4.5 UNIT V V A A W V A µs
Tmb ≤ 25 ˚C IC = 9.0 A; IB = 1.64 A ICsat = 9.0 A; IB(end) = 1.3 A
PINNING - SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 16 40 10 15 200 10 125 150 150 UNIT V V A A A A mA A W ˚C ˚C
average over any 20 ms period Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W
1 Turn-off current.
September 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IC = 9.0 A; IB = 1.64 A IC = 9.0 A; IB = 1.64 A IC = 1 A; VCE = 5 V IC = 9 A; VCE = 5 V
MIN. 7.5 0.825 9 5.5
TYP. 14 0.91 17 8
MAX. 1.0 2.0 1.0 5.0 1.0 27 10
UNIT mA mA mA V V V
Emitter cut-off current Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER Switching times (32 kHz line deflection dynamic test circuit). ts tf Turn-off storage time Turn-off fall time CONDITIONS ICsat = 9.0 A; LC = 200 µH; Cfb = 13 nF; VCC = 138 V; IB(end) = 1.3 A; -IBM = 4.5 A; -VBB = 4 V; LB = 1 µH TYP. MAX. UNIT
3.5 0.14
4.5 0.25
µs µs
TRANSISTOR IC DIODE
ICsat
ICsat 90 %
t
IC
IB
IBend t 10us 13us 32us
ts IB IBend tf
10 %
t
VCE
t
t
- IBM
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AW
+ 150 v nominal adjust for ICsat
VCEsat / V 10 Tj = 85 C Tj = 25 C
BU2530/2AL
Lc
1
IC/IB = 10
IBend
LB
T.U.T. Cfb
IC/IB = 5 0.1
-VBB
0.01 0.1 1 10 IC / A 100
Fig.3. Switching times test circuit.
Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
hFE 100 VCE = 1 V
BU2530/2AL
VBEsat / V 1 IC = 9 A 0.9
BU2530/2AL
Tj = 85 C Tj = 25 C
10
0.8 IC = 7 A
0.7
Tj = 85 C Tj = 25 C
1 0.01
0.1
1
10 IC / A
100
0.6
0
1
2
3
IB / A
4
Fig.4. High and low DC current gain. hFE = f (IC) VCE = 1 V
Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
hFE 100 VCE = 5 V
BU2530/2AL
PTOT / W 100
BU2530AL
Tj = 85 C Tj = 25 C
Tj = 85 C Tj = 25 C
10
10
1 0.01
0.1
1
10 IC / A
100
1
0
1
2
3 IB / A
4
Fig.5. High and low DC current gain. hFE = f (IC) VCE = 5 V
Fig.8. Typical turn-off losses. PTOT = f (IB); parameter IC; f = 32 kHz
September 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AW
ts/tf / us 10
BU2530AL
VCC
8
LC
6
4
IBend
VCL LB T.U.T.
CFB
2
-VBB
0
0
1
2
3 IB / A
4
Fig.9. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
Fig.12. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 5 V; LC = 1.5 mH; VCL = 1450 V; LB = 1 - 3 µH; CFB = 1 - 10 nF; IB(end) = 1.3 - 2.6 A
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
40
IC / A
BU2530/32AL
30 Area where fails occur 20
10
0
20
40
60
80 100 Tmb / C
120
140
0 100
VCE / V
1000
1500
Fig.10. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb)
Fig.13. Reverse bias safe operating area. Tj ≤ Tjmax
Zth / K/W 10
BU2530AL/32AL
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01
T P D tp D= tp T t
D=0 0.001 1.0E-06 1E-04 t/s 1E-02 1E+00
Fig.11. Transient thermal impedance. Zth j-mb = f(t); parameter D.