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BU2530AW Dataheets PDF



Part Number BU2530AW
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU2530AW DatasheetBU2530AW Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector curre.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 9 3.5 MAX. 1500 800 16 40 125 5.0 4.5 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 9.0 A; IB = 1.64 A ICsat = 9.0 A; IB(end) = 1.3 A PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 16 40 10 15 200 10 125 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W 1 Turn-off current. September 1997 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IC = 9.0 A; IB = 1.64 A IC = 9.0 A; IB = 1.64 A IC = 1 A; VCE = 5 V IC = 9 A; VCE = 5 V MIN. 7.5 0.825 9 5.5 TYP. 14 0.91 17 8 MAX. 1.0 2.0 1.0 5.0 1.0 27 10 UNIT mA mA mA V V V Emitter cut-off current Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER Switching times (32 kHz line deflection dynamic test circuit). ts tf Turn-off storage time Turn-off fall time CONDITIONS ICsat = 9.0 A; LC = 200 µH; Cfb = 13 nF; VCC = 138 V; IB(end) = 1.3 A; -IBM = 4.5 A; -VBB = 4 V; LB = 1 µH TYP. MAX. UNIT 3.5 0.14 4.5 0.25 µs µs TRANSISTOR IC DIODE ICsat ICsat 90 % t IC IB IBend t 10us 13us 32us ts IB IBend tf 10 % t VCE t t - IBM Fig.1. Switching times waveforms. Fig.2. Switching times definitions. 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW + 150 v nominal adjust for ICsat VCEsat / V 10 Tj = 85 C Tj = 25 C BU2530/2AL Lc 1 IC/IB = 10 IBend LB T.U.T. Cfb IC/IB = 5 0.1 -VBB 0.01 0.1 1 10 IC / A 100 Fig.3. Switching times test circuit. Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB hFE 100 VCE = 1 V BU2530/2AL VBEsat / V 1 IC = 9 A 0.9 BU2530/2AL Tj = 85 C Tj = 25 C 10 0.8 IC = 7 A 0.7 Tj = 85 C Tj = 25 C 1 0.01 0.1 1 10 IC / A 100 0.6 0 1 2 3 IB / A 4 Fig.4. High and low DC current gain. hFE = f (IC) VCE = 1 V Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC hFE 100 VCE = 5 V BU2530/2AL PTOT / W 100 BU2530AL Tj = 85 C Tj = 25 C Tj = 85 C Tj = 25 C 10 10 1 0.01 0.1 1 10 IC / A 100 1 0 1 2 3 IB / A 4 Fig.5. High and low DC current gain. hFE = f (IC) VCE = 5 V Fig.8. Typical turn-off losses. PTOT = f (IB); parameter IC; f = 32 kHz September 1997 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW ts/tf / us 10 BU2530AL VCC 8 LC 6 4 IBend VCL LB T.U.T. CFB 2 -VBB 0 0 1 2 3 IB / A 4 Fig.9. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz Fig.12. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 5 V; LC = 1.5 mH; VCL = 1450 V; LB = 1 - 3 µH; CFB = 1 - 10 nF; IB(end) = 1.3 - 2.6 A 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 40 IC / A BU2530/32AL 30 Area where fails occur 20 10 0 20 40 60 80 100 Tmb / C 120 140 0 100 VCE / V 1000 1500 Fig.10. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) Fig.13. Reverse bias safe operating area. Tj ≤ Tjmax Zth / K/W 10 BU2530AL/32AL 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 T P D tp D= tp T t D=0 0.001 1.0E-06 1E-04 t/s 1E-02 1E+00 Fig.11. Transient thermal impedance. Zth j-mb = f(t); parameter D.


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