BU2720DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 5.5 7.4 MAX. 1700 825 10 25 45 1.0 8.5 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 5.5 A; IB = 1.38 A f = 16 kHz ICsat = 5.5 A; f = 16 kHz PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 10 25 10 14 150 6 45 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms pe...