Document
BU406/406H/408
BU406/406H/408
High Voltage Switching
• Use In Horizontal Deflection Output Stage
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Value 400 200 6 7 10 4 60 150 - 55 ~ 150 Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 400V, VBE = 0 VCE = 250V, VBE = 0 VCE = 250V, VBE = 0 @ TC=150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A VCE = 10V, IC = 0.5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A 10 0.75 0.4 0.4 Min. Max. 5 100 1 1 1 1 1 1.2 1.2 1.5 Units mA µA mA mA V V V V V V MHz µs µs µs
IEBO VCE(sat)
Emitter Cut-off Current Collector-Emitter Saturation Voltage : BU406 : BU406H : BU408 Base-Emitter Saturation Voltage : BU406 : BU406H : BU408 Current Gain Bandwidth Product Turn OFF Time : BU406 : BU406H : BU408
VBE(sat)
fT tOFF
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU406/406H/408
Typical Characteristics
5
IB = 2
00m
A
IB =
mA 180 60mA IB = 1
1000
IC[A], COLLECTOR CURRENT
4
A IB = 140m A IB = 120m
VCE = 5V
hFE, DC CURRENT GAIN
10
0m A I B = 10 mA IB = 80 IB = 60 mA
100
3
mA IB = 40
2
IB = 20mA
1
10
0 0 1 2 3 4 5 6 7 8 9
1 1 10 100 1000 10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE
10000
1000
IC = 10 IB
f = 1MHz
1000
VBE (sat)
Cob [pF], CAPACITANCE
100
100
10
VCE(sat)
10 1 10 100 1000 10000
1 1 10 100
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
80
70
IC[A], COLLECTOR CURRENT
PD [W], POWER DISSIPATIOAN
IC Max. (Pulsed)
10
60
IC Max. (Continuous)
50
n io at ip ss Di
s 1m
40
s 0m 10 ited m Li
s m 10
30
1
20
VCE MAX.
d ite im bL S/
10
0 0 25 50
o
0.1 1 10 100
75
100
125
150
175
200
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU406/406H/408
Typical Characteristics (Continued)
Figure 7. Static Characteristic
Figure 8. DC current Gain
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU406/406H/408
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 –0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80.