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BU407

ST Microelectronics

HIGH CURRENT NPN SILICON TRANSISTOR

BU407 HIGH CURRENT NPN SILICON TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR s APPLICATIONS HORIZONTA...


ST Microelectronics

BU407

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BU407 HIGH CURRENT NPN SILICON TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR s APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs DESCRIPTION The BU407 is a silicon epitaxial planar NPN transistors in Jedec TO-220 plastic package. They are fast switching, high voltage devices foe use in horizontal deflection output stages of medium and small screens MTV receivers with 110o CRT as monochrome computers terminals. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CEO V EBO IC I CM I CM IB P tot T stg Tj June 1997 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Collector Peak Current (t p = 10 ms) Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 330 330 150 6 7 10 15 4 60 -65 to 150 150 Unit V V V V A A A A W o C o C 1/4 BU407 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.08 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Transition-Frequency Turn-off Time Second Breakdown Collector Current Test Conditions V CE =330 V V CE =200 V V CE =200 ...




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