BU407

BU407/407H BU407/407H High Voltage Switching Use In Horizontal Deflection Output Stage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 330 150 6 7 10 4 60 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 330V, VBE = 0 VCE = 200V, VBE = 0 VCE = 200V, VBE = 0 @ TC= 150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A VCE = 10V, IC = 0.5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A 10 0.75 0.4 Min. Max. 5 100 1 1 1 1 1.2 1.2 Units mA µA mA mA V V V V MHz µs µs IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage : BU407 : BU407H Base-Emitter Saturation Voltage : BU407 : BU407H Current Gain Bandwidth Product Turn OFF Time : BU407 : BU407H VBE(sat) fT tOFF ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU407/407H Typical Characteristics 5 mA 180 IB = 2 00m A IB = IB = 160mA A IB = 140m A IB = 120m 1000 VCE = 5V IC[A], COLLECTOR CURRENT 4 0m A IB = 10 hFE, DC CURRENT GAIN 10 IB = 80 3 mA mA = 4 0 mA IB = 60 IB 100 2 ...