BU407/407H
BU407/407H
High Voltage Switching
• Use In Horizontal Deflection Output Stage
1
TO-220 2.Collector 3.Emitt...
BU407/407H
BU407/407H
High Voltage Switching
Use In Horizontal Deflection Output Stage
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 330 150 6 7 10 4 60 150 - 65 ~ 150 Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 330V, VBE = 0 VCE = 200V, VBE = 0 VCE = 200V, VBE = 0 @ TC= 150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A VCE = 10V, IC = 0.5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A 10 0.75 0.4 Min. Max. 5 100 1 1 1 1 1.2 1.2 Units mA µA mA mA V V V V MHz µs µs
IEBO VCE(sat)
Emitter Cut-off Current Collector-Emitter Saturation Voltage : BU407 : BU407H Base-Emitter Saturation Voltage : BU407 : BU407H Current Gain Bandwidth Product Turn OFF Time : BU407 : BU407H
VBE(sat)
fT tOFF
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU407/407H
Typical Characteristics
5
mA 180
IB = 2
00m
A
IB =
IB = 160mA
A IB = 140m A IB = 120m
1000
VCE = 5V
IC[A], COLLECTOR CURRENT
4
0m A IB = 10
hFE, DC CURRENT GAIN
10
IB = 80
3
mA mA = 4 0 mA
IB = 60 IB
100
2
...