Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507AX
GENERAL DESCRIPTION
Enhanced...
Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BU4507AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching
npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4 4 0.3 0.21 MAX. 1500 800 8 15 45 3.0 0.45 UNIT V V A A W V A A µs µs
Ths ≤ 25 ˚C IC = 4 A; IB = 1 A f = 16kHz f = 56kHz ICsat = 4 A; f = 16kHz ICsat = 4 A; f = 56kHz
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junc...