Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BU4508AF Silicon Diffused Power Transistor
Product specification Supersedes data of January 1998 File under Discrete Semiconductors, SC06 June 1998
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 5.0 4.0 0.35 0.17 MAX. 1500 800 8 15 45 3.0 0.48 UNIT V V A A W V A A µs µs
Ths ≤ 25 ˚C IC = 5.0 A; IB = 1.25 A f = 16kHz f = 64kHz ICsat = 5A; f = 16kHz ICsat = 4A; f = 64kHz
PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 8 15 4 6 5 45 150 150 UNIT V V A A A A A W ˚C ˚C
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W
1 Turn-off current.
June 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS MIN. 7.5 800 0.85 4.2 TYP. 13.5 0.94 12 5.7 MAX. 1.0 2.0 100 3.0 1.03 7.3 UNIT mA mA uA V V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 6.0 V; IC = 0 A Emitter-base breakdown voltage IB = 1 mA Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 5.0 A; IB = 1.25 A Base-emitter saturation voltage IC = 5.0 A; IB = 1.25 A DC current gain IC = 100 mA; VCE = 5 V IC = 5.0 A; VCE = 5 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Switching times (64 kHz line deflection circuit) Turn-off storage time Turn-off fall time ICsat = 4 A; IB1 = 0.8 A;(IB2 = -2.0 A) 1.9 0.17 µs µs CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 5.0 A; IB1 = 1.0 A;(IB2 = -2.5 A) 3.2 0.35 4.3 0.48 µs µs TYP. 80 MAX. UNIT pF
ts tf
ts tf
2 Measured with half sine-wave voltage (curve tracer).
June 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AF
ICsat
+ 50v 100-200R
IC
90 %
Horizontal
tf
10 %
Oscilloscope
IB
t
ts IB1
Vertical 100R 6V 30-60 Hz 1R
t
- IB2
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal adjust for ICsat
Lc
250 200
100
IBend
LB
T.U.T. Cfb
0 VCE / V
min VCEOsust
-VBB
Fig.2. Oscilloscope display for VCEOsust.
Fig.5. Switching times test circuit.
TRANSISTOR IC DIODE
ICsat
100
hFE Ths = 25 C Ths = 85 C
VCE = 1V
t
IB
IB1 t 20us 26us 64us IB2
10
VCE
1 0.001
t
0.01
0.1
1
IC / A
10
Fig.3. Switching times waveforms (16 kHz).
Fig.6. High and low DC current gain.
June 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AF
100
hFE
10
VCE = 5V Ths = 25 C Ths = 85 C
ts/tf / us
ICsat = 5 A Ths = 85 C Freq = 16 kHz
8
6
10
ts
4
2 tf
1 0.001
0.01
0.1
1
IC / A
10
0
0
0.5
1
1.5
2
2.5 IB / A 3
Fig.7. High and low DC current gain.
Fig.10. Typical collector storage and fall time. IC =5 A; Tj = 85˚C; f = 16kHz
Normalised Power Derating
with heatsink compound
10
VCEsat / V
BU4508AF/X/Z
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Ths = 25 C Ths = 85 C
1
0.1
IC/IB = 5
0.01 0.1
0
1 10 IC / A 100.