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BU4508AF Dataheets PDF



Part Number BU4508AF
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU4508AF DatasheetBU4508AF Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BU4508AF Silicon Diffused Power Transistor Product specification Supersedes data of January 1998 File under Discrete Semiconductors, SC06 June 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an.

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DISCRETE SEMICONDUCTORS DATA SHEET BU4508AF Silicon Diffused Power Transistor Product specification Supersedes data of January 1998 File under Discrete Semiconductors, SC06 June 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 5.0 4.0 0.35 0.17 MAX. 1500 800 8 15 45 3.0 0.48 UNIT V V A A W V A A µs µs Ths ≤ 25 ˚C IC = 5.0 A; IB = 1.25 A f = 16kHz f = 64kHz ICsat = 5A; f = 16kHz ICsat = 4A; f = 64kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 8 15 4 6 5 45 150 150 UNIT V V A A A A A W ˚C ˚C Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W 1 Turn-off current. June 1998 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS MIN. 7.5 800 0.85 4.2 TYP. 13.5 0.94 12 5.7 MAX. 1.0 2.0 100 3.0 1.03 7.3 UNIT mA mA uA V V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 6.0 V; IC = 0 A Emitter-base breakdown voltage IB = 1 mA Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 5.0 A; IB = 1.25 A Base-emitter saturation voltage IC = 5.0 A; IB = 1.25 A DC current gain IC = 100 mA; VCE = 5 V IC = 5.0 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Switching times (64 kHz line deflection circuit) Turn-off storage time Turn-off fall time ICsat = 4 A; IB1 = 0.8 A;(IB2 = -2.0 A) 1.9 0.17 µs µs CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 5.0 A; IB1 = 1.0 A;(IB2 = -2.5 A) 3.2 0.35 4.3 0.48 µs µs TYP. 80 MAX. UNIT pF ts tf ts tf 2 Measured with half sine-wave voltage (curve tracer). June 1998 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF ICsat + 50v 100-200R IC 90 % Horizontal tf 10 % Oscilloscope IB t ts IB1 Vertical 100R 6V 30-60 Hz 1R t - IB2 Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions. IC / mA + 150 v nominal adjust for ICsat Lc 250 200 100 IBend LB T.U.T. Cfb 0 VCE / V min VCEOsust -VBB Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit. TRANSISTOR IC DIODE ICsat 100 hFE Ths = 25 C Ths = 85 C VCE = 1V t IB IB1 t 20us 26us 64us IB2 10 VCE 1 0.001 t 0.01 0.1 1 IC / A 10 Fig.3. Switching times waveforms (16 kHz). Fig.6. High and low DC current gain. June 1998 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF 100 hFE 10 VCE = 5V Ths = 25 C Ths = 85 C ts/tf / us ICsat = 5 A Ths = 85 C Freq = 16 kHz 8 6 10 ts 4 2 tf 1 0.001 0.01 0.1 1 IC / A 10 0 0 0.5 1 1.5 2 2.5 IB / A 3 Fig.7. High and low DC current gain. Fig.10. Typical collector storage and fall time. IC =5 A; Tj = 85˚C; f = 16kHz Normalised Power Derating with heatsink compound 10 VCEsat / V BU4508AF/X/Z 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Ths = 25 C Ths = 85 C 1 0.1 IC/IB = 5 0.01 0.1 0 1 10 IC / A 100.


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