BU506

DISCRETE SEMICONDUCTORS DATA SHEET BU506; BU506D Silicon diffused power transistors Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode. BU506; BU506D 2 2 APPLICATIONS Horizontal deflection circuits of colour television receivers Line-operated switch-mode applications. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter Fig.1 Simplified outline (TO-220AB) and symbols. MBK106 1 MBB008 1 3 MBB077 3 1 2 3 a. BU506. b. BU506D. QUICK REFERENCE DATA SYMBOL VCESM VCEO VCEsat VF ICsat IC ICM Ptot tf PARAMETER collector-emitter peak voltage collector-emitter voltage collector-emitter saturation voltage diode forward voltage (BU506D) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Fig.2 see Fig.2 Tmb ≤ 25 °C; see Fig.3 inductive load; see Fig.9 VBE = 0 open base IC = 3 A; IB = 1.33 A; see Fig.6 IF = 3 A; see Fig.10 CONDITIONS − − − 1.5 − − − − 0.7 TYP. MAX. 1500 700 1 − 3 5 8 100 − V V V V A A A W µs UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W 1997 Aug 13 1 Philips Semiconductors Product specification Silicon diffus...