BU506F

DISCRETE SEMICONDUCTORS DATA SHEET BU506F; BU506DF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode. APPLICATIONS Horizontal deflection circuits of colour television receivers Line-operated switch-mode applications. PINNING PIN(1) 1 2 3 Note 1. All pins electrically isolated from mounting base. QUICK REFERENCE DATA SYMBOL VCESM VCEO VCEsat VF ICsat IC ICM Ptot tf PARAMETER collector-emitter peak voltage collector-emitter voltage collector-emitter saturation voltage diode forward voltage (BU506DF) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Figs 2 and 3 see Figs 2 and 3 Th ≤ 25 °C; see Fig.4 inductive load; see Fig.11 VBE = 0 open base CONDITIONS DESCRIPTION base collector emitter 1 2 3 MBC668 BU506F; BU506DF 2 2 1 MBB008 1 3 MBB077 3 a. BU506F. b. BU506DF. Front view Fig.1 Simplified outline (SOT186) and symbols. TYP. − − − 1.5 − − − − 0.7 MAX. 1500 700 1 2.2 3 5 8 20 − UNIT V V V V A A A W µs IC = 3 A; IB = 1.33 A; see Figs 7 and 8 IF = 3 A THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Moun...