POWER TRANSISTORS. BU508A Datasheet

BU508A TRANSISTORS. Datasheet pdf. Equivalent

BU508A Datasheet
Recommendation BU508A Datasheet
Part BU508A
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
Feature BU508A; BU208A ® BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s STMicroelectronics PRE.
Manufacture ST Microelectronics
Datasheet
Download BU508A Datasheet





ST Microelectronics BU508A
BU208A
® BU508A/BU508AFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s HIGH VOLTAGE CAPABILITY (> 1500 V)
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208A, BU508A and BU508AFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and use a Hollow Emitter structure to enhance
switching speeds.
1
2
TO-3
TO-218
33
22
1 ISOWATT218 1
INTERNAL SCHEMATIC DIAGRAM
For TO-3 :
C = Tab
E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
V EBO
IC
ICM
Parameter
Collector-Emit ter Volt age (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Ptot
Vi so l
Tstg
Tj
Total Dissipation at Tc = 25 oC
Insulation W ithstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
St orage Temperature
Max. Operating Junction Temperature
BU208A
TO - 3
150
Value
1500
700
10
8
15
BU508A BU508AFI
TO - 218 ISOWATT218
125 50
2500
Unit
V
V
V
A
A
W
V
-65 to 175 -65 to 150 -65 to 150
175 150
150
oC
oC
April 2002
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ST Microelectronics BU508A
BU208A / BU508A / BU508AFI
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
TO-3 TO-218 ISOWATT218
11
2.5 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V
TC = 125 oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus )Collector-Emit ter
Sustaining Voltage
(IB = 0)
VEBO
Emitter Base Voltage
(IC = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 mA
IE = 10 mA
IC = 4.5 A
IB = 2 A
VBE(s at)Base-Emitt er
Saturation Voltage
IC = 4.5 A
IB = 2 A
INDUCTIVE LO AD
ts Storage Time
tf Fall Time
IC = 4.5 A hFE = 2.5 VCC = 140 V
LC = 0.9 mH LB = 3 µH
fT Transition Frequency IC = 0. 1 A
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCE = 5 V f = 5 MHz
Min.
700
10
Typ .
7
550
7
Max.
1
2
100
1
1.3
Unit
mA
mA
µA
V
V
V
V
µs
ns
MHz
Safe Operating Area (TO-3)
Safe Operating Areas (TO-218/ISOWATT218)
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ST Microelectronics BU508A
Derating Curves (TO-3)
BU208A / BU508A / BU508AFI
Derating Curves (TO-218/ISOWATT218)
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
3/8





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