BU508AF
BU508AF
TV Horizontal Output Applications
1
TO-3PF 2.Collector 3.Emitter
1.Base
NPN Triple Diffused Planar ...
BU508AF
BU508AF
TV Horizontal Output Applications
1
TO-3PF 2.Collector 3.Emitter
1.Base
NPN Triple Diffused Planar Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCES VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 700 5 5 15 60 150 - 65 ~ 150 Units V V V A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) BVEBO ICES IEBO hFE VCE(sat) VBE(sat) Parameter * Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition IC = 100mA, IB = 0 IE = 10mA, IC = 0 VCE = 1500V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 4.5A IC = 4.5A, IB = 2A IC = 4.5A, IB = 2A 2.25 1 1.5 V V Min. 700 5 1 10 Typ. Max. Units V V mA mA
* Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
BU508AF
Typical Characteristics
100
10000
VBE(sat)[mV], SATURATION VOLTAGE
VCE = 5V
IC = 2 IB
hFE, DC CURRENT GAIN
10
1000
1
100
0.1 0.01
0.1
1
10
10 0.1
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. Base-Emitter Saturation Voltage
10000
1000
VCE(sat)[mV]...