Document
BU806/807
BU806/807
High Voltage & Fast Switching Darlington Transistor
• Using In Horizontal Output Stages of 110° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BU806 : BU807 VCEO Collector-Emitter Voltage : BU806 : BU807 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 200 150 6 8 15 2 60 150 - 55 ~150 V V V A A A W °C °C 400 330 V V Value Units
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO (sus) Parameter * Collector-Emitter Sustaining Voltage : BU806 : BU807 Collector Cut-off Current : BU806 : BU807 Collector Cut-off Current : BU806 : BU807 Emitter Cut-off Current * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Damper Diode Forward Voltage Test Condition IC = 100mA, IB = 0 Min. 200 150 100 100 100 100 3 1.5 2.4 2 Max. Units V V µA µA µA µA mA V V V
ICES
VCE = 400V, VBE = 0 VCE = 330V, VBE = 0 VCE = 400V, VBE = -6V VCE = 330V, VBE = -6V VBE = 6V, IC = 0 IC = 5A, IB = 50mA IC = 5A, IB = 50mA IF = 4A
ICEV
IEBO VCE(sat) VBE(sat) VF
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU806/807
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
10
Ic = 100 IB
hFE, DC CURRENT GAIN
VBE(sat)
100
V CE = 5V V CE = 1.5V
1
V CE(sat)
10 0.1
1
10
0.1 0.1
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
10
1000
IC[A], COLLECTOR CURRENT
100
Vf[V], FORWARD VOLTAGE
IC MAX. (Pulse)
10
1ms 10us
500
m 10
1
IC MAX. (DC)
1
us
s
DC
100us
0.1
BU806
0.1 0.1 1 10 0.01 0.01
BU807
0.1 1 10 100 1000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Damper Diode
Figure 4. Safe Operating Area
80
70
PC[W], POWER DISSIPATION
60
50
40
30
20
10
0 0 50
o
100
150
200
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU806/807
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 –0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 –0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
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