DatasheetsPDF.com

BU931 Dataheets PDF



Part Number BU931
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description Automotive-grade high voltage ignition coil driver NPN power transistor
Datasheet BU931 DatasheetBU931 Datasheet (PDF)

BU931 Automotive-grade high voltage ignition coil driver NPN power Darlington transistor Datasheet - obsolete product Features TAB roduct(s) 1 P 2 lete TO-3 Obsolete Product(s) - Obso Figure 1: Internal schematic diagram  AEC-Q101 qualified  Very rugged Bipolar technology  High operating junction temperature Applications  High ruggedness electronic ignitions Description This is a high voltage power Darlington transistor developed using multi-epitaxial planar technology. It has been prope.

  BU931   BU931



Document
BU931 Automotive-grade high voltage ignition coil driver NPN power Darlington transistor Datasheet - obsolete product Features TAB roduct(s) 1 P 2 lete TO-3 Obsolete Product(s) - Obso Figure 1: Internal schematic diagram  AEC-Q101 qualified  Very rugged Bipolar technology  High operating junction temperature Applications  High ruggedness electronic ignitions Description This is a high voltage power Darlington transistor developed using multi-epitaxial planar technology. It has been properly designed for automotive environment as electronic ignition power actuators. Order code BU931 Table 1: Device summary Marking Package BU931 TO-3 Packing Tray October 2017 DocID031170 Rev 1 This is information on a discontinued product. 1/10 www.st.com Contents Contents BU931 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 TO-3 package information................................................................. 8 Obsolete Product(s) - Obsolete Product(s) 5 Revision history .............................................................................. 9 2/10 DocID031170 Rev 1 BU931 Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 500 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 15 A ICM Collector peak current 30 A IB ) IBM t(s PTOT c Tstg du Tj Base current Base peak current Total dissipation at Tc = 25 °C Storage temperature range Operating junction temperature range te Pro Symbol Obsolete Product(s) - Obsole RthJC Table 3: Thermal data Parameter Thermal resistance junction-case 1 A 5 A 175 W °C -65 to 200 °C Value 1 Unit °C/W DocID031170 Rev 1 3/10 Electrical characteristics BU931 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current VBE = 0 V, VCE = 500 V VBE = 0 V, VCE = 500 V, TC = 125 °C (1) - 100 μA - 0.5 mA IB = 0 A, VCE = 450 V - 100 µA ICEO Collector cut-off current t(s) IEBO Emitter cut-off current duc VCEO(sus)(2) Collector-emitter sustaining voltage Pro VCE(sat)(2) Collector-emitter saturation voltage solete VBE(sat)(2) Base-emitter saturation voltage - Ob hFE(2) t(s) VF DC current gain Diode forward voltage roduc Functional test IB = 0 A, VCE = 450 V, TC = 125 °C (1) IC= 0 A, VEB = 5 V IB= 0 A, IC = 100 mA IC = 7 A, IB =.


BU9255FS BU931 BU931P


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)