®
BUH1015 BUH1015HI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s
STMicroelectronics PREFERRED SALESTYPES H...
®
BUH1015 BUH1015HI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
s
s s
STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS
3
3 2 1
DESCRIPTION The BUH1015 and BUH1015HI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
2 1
TO-218
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V CBO V CEO VEBO IC I CM IB I BM P tot T s tg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction T emperature
o
Valu e 1500 700 10 14 18 8 11 160 -65 to 150 150 70
Un it V V V A A A A W
o o
C C 1/8
December 1999
BUH1015/BUH1015HI
THERMAL DATA
TO -218 ISOW AT T218 R t hj-ca se Thermal Resistance Junction-case Max 0.78 1.8
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 Tj = 125 o C Min. Typ . Max. 0.2 2 100 Un it mA mA µA V
V CEO(su...