BUH2M20AP

® BUH2M20AP HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODE OPERATION. s APPLICATIONS: DESIGNED SPECIFICALLY FOR DYNAMIC FOCUS IN CTV AND MONITOR. DESCRIPTION The BUH2M20AP is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 2000 1200 5 30 40 20 -65 to 150 150 Unit V V V mA mA W o o C C September 1998 1/4 BUH2M20AP THERMAL DATA R thj-case Thermal Resistance Junction-case Max 6.25 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO VCEO V EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ C ob Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Breakdown Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Output Capacitance Test Conditions V CE = 2000 V V EB = 4 V IC = 1 mA I E = 10 µ A I C = 2 mA I C = 2 mA I C = 2 mA I C = 10 mA V CB = 100 V I B = 400 µ A I B = 400 µ A V CE = 10 V V CE = 10 V IC = 0 f = 1MHz 10 10 3 pF 1200 5 5 2 Min....